Ferroelectric transistors for memory and neuromorphic device applications

IJ Kim, JS Lee - Advanced Materials, 2023 - Wiley Online Library
Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …

PVDF‐based ferroelectric polymers in modern flexible electronics

X Chen, X Han, QD Shen - Advanced Electronic Materials, 2017 - Wiley Online Library
Ferroelectric polymers are the most promising electroactive materials with outstanding
properties that can be integrated into a variety of flexible electronic devices. Their …

High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing

Z Luo, Z Wang, Z Guan, C Ma, L Zhao, C Liu… - Nature …, 2022 - nature.com
The rapid development of neuro-inspired computing demands synaptic devices with ultrafast
speed, low power consumption, and multiple non-volatile states, among other features …

Artificial optoelectronic synapses based on ferroelectric field-effect enabled 2D transition metal dichalcogenide memristive transistors

ZD Luo, X Xia, MM Yang, NR Wilson, A Gruverman… - ACS …, 2019 - ACS Publications
Neuromorphic visual sensory and memory systems, which can perceive, process, and
memorize optical information, represent core technology for artificial intelligence and …

Emerging opportunities for 2D semiconductor/ferroelectric transistor‐structure devices

ZD Luo, MM Yang, Y Liu, M Alexe - Advanced Materials, 2021 - Wiley Online Library
Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which
revolutionary innovations are needed to address fundamental limitations on material and …

Ferroelectric materials for solar energy conversion: photoferroics revisited

KT Butler, JM Frost, A Walsh - Energy & Environmental Science, 2015 - pubs.rsc.org
The application of ferroelectric materials (ie solids that exhibit spontaneous electric
polarisation) in solar cells has a long and controversial history. This includes the first …

Dual-ferroelectric-coupling-engineered two-dimensional transistors for multifunctional in-memory computing

ZD Luo, S Zhang, Y Liu, D Zhang, X Gan, J Seidel… - ACS …, 2022 - ACS Publications
In-memory computing featuring a radical departure from the von Neumann architecture is
promising to substantially reduce the energy and time consumption for data-intensive …

Ferroelectric tunnel junctions for information storage and processing

V Garcia, M Bibes - Nature communications, 2014 - nature.com
Computer memory that is non-volatile and therefore able to retain its information even when
switched off enables computers that do not need to be booted up. One of the technologies …

Room temperature magnetoelectric coupling in a molecular ferroelectric ytterbium (III) complex

J Long, MS Ivanov, VA Khomchenko, E Mamontova… - Science, 2020 - science.org
Magnetoelectric (ME) materials combine magnetic and electric polarizabilities in the same
phase, offering a basis for developing high-density data storage and spintronic or low …

Integration of ferroelectric materials: an ultimate solution for next-generation computing and storage devices

R Khosla, SK Sharma - ACS applied electronic materials, 2021 - ACS Publications
Over the decades since ferroelectricity was revealed, ferroelectric materials have emerged
as a cornerstone for a wide spectrum of semiconductor technology and electronic device …