Large-area soft e-skin: The challenges beyond sensor designs
Sensory feedback from touch is critical for many tasks carried out by robots and humans,
such as grasping objects or identifying materials. Electronic skin (e-skin) is a crucial …
such as grasping objects or identifying materials. Electronic skin (e-skin) is a crucial …
Hybrid silicon nanowire devices and their functional diversity
In the pool of nanostructured materials, silicon nanostructures are known as conventionally
used building blocks of commercially available electronic devices. Their application areas …
used building blocks of commercially available electronic devices. Their application areas …
Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics
Heavily doped semiconductor thin films are very promising for application in mid-infrared
plasmonic devices because the real part of their dielectric function is negative and broadly …
plasmonic devices because the real part of their dielectric function is negative and broadly …
Analysis of Ge micro-cavities with in-plane tensile strains above 2%
Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon
nitride stressor layers. Photoluminescence measurements demonstrate emission at …
nitride stressor layers. Photoluminescence measurements demonstrate emission at …
Silicon-based nanostructures for integrated thermoelectric generators
G Gadea, M Pacios, Á Morata… - Journal of Physics D …, 2018 - iopscience.iop.org
Nanostructuring is a promising approach for enhancing thermoelectric properties of existing
abundant and compatible materials such as silicon and silicon-based compounds. Recent …
abundant and compatible materials such as silicon and silicon-based compounds. Recent …
One dimensional transport in silicon nanowire junction-less field effect transistors
Junction-less nanowire transistors are being investigated to solve short channel effects in
future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction …
future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction …
Experimental and simulation study of silicon nanowire transistors using heavily doped channels
VP Georgiev, MM Mirza, AI Dochioiu… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
The experimental results from 8 nm diameter silicon nanowire junctionless field-effect
transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to …
transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to …
Multiscale modeling of plasmon-enhanced power conversion efficiency in nanostructured solar cells
The unique optical properties of nanometallic structures can be exploited to confine light at
subwavelength scales. This excellent light trapping is critical to improve light absorption …
subwavelength scales. This excellent light trapping is critical to improve light absorption …
Low field mobility in electrostatically evolved AlGaN/GaN one-dimensional channel from a two-dimensional electron gas system
AS Kumar, NS Garigapati, D Saha - Applied Physics Letters, 2019 - pubs.aip.org
Here, we have investigated size dependent electron mobility in an electrostatically evolved
AlGaN/GaN one-dimensional channel from a two-dimensional heterostructure. An …
AlGaN/GaN one-dimensional channel from a two-dimensional heterostructure. An …
Impact of Randomly Distributed Dopants on -Gate Junctionless Silicon Nanowire Transistors
H Carrillo-Nunez, MM Mirza, DJ Paul… - … on Electron Devices, 2018 - ieeexplore.ieee.org
This paper presents experimental and simulation analysis of an Q-shaped silicon
junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and …
junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and …