Device and circuit-level assessment of GaSb/Si heterojunction vertical tunnel-FET for low-power applications
This article investigates the performance of a vertically grown GaSb/Si tunnel field effect
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …
Vertically-grown TFETs: an extensive analysis
AS Geege, TSA Samuel - Silicon, 2023 - Springer
TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …
electrical performance while also providing steeper switching ratio. This study encloses with …
Performance investigation of GaSb/Si heterojunction based gate underlap and overlap vertical TFET biosensor
A Theja, M Panchore - IEEE Transactions on NanoBioscience, 2022 - ieeexplore.ieee.org
The present paper estimates the performance of vertically developed double gate GaSb/Si
tunnel field-effect transistor (V-DGTFET) biosensor with source pocket. A commercially …
tunnel field-effect transistor (V-DGTFET) biosensor with source pocket. A commercially …
III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications
This article presents a comparative study on the performance characteristics of some vertical
tunnel field effect transistor (TFET): conventional all-Si TFET with pocket, In 0.53 Ga 0.47 …
tunnel field effect transistor (TFET): conventional all-Si TFET with pocket, In 0.53 Ga 0.47 …
Performance analysis of heterojunction tunnel FET device with variable temperature
In this paper, the analysis of SiGe source-based heterojunction Tunnel FET device is
reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source …
reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source …
Ge-source based L-shaped tunnel field effect transistor for low power switching application
In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET)
has been analyzed with different engineering techniques such as bandgap engineering …
has been analyzed with different engineering techniques such as bandgap engineering …
Improvement of electrical characteristics of SiGe source based tunnel FET device
Abstract Tunnel Field Effect Transistor (TFET) is one of the most promising alternative device
for semiconductor technology and shows better performance as compared to the …
for semiconductor technology and shows better performance as compared to the …
Design and analysis of GaSb/Si based negative capacitance TFET at the device and circuit level
In this paper, the design and performance analysis of GaSb/Si-based Negative Capacitance
(NC) Tunnel Field Effect Transistor (TFET) are comparatively analyzed at both device and …
(NC) Tunnel Field Effect Transistor (TFET) are comparatively analyzed at both device and …
Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): introduction to a BG-HJ-STEFT based …
This manuscript reports the back-gate effects on device-level performance of a
heterojunction TFET on SELBOX substrate (HJ-STFET). The proposed structure implements …
heterojunction TFET on SELBOX substrate (HJ-STFET). The proposed structure implements …
Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors
This paper reports on a comparative study of the analysis of electrical noise of
heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T …
heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T …