Device and circuit-level assessment of GaSb/Si heterojunction vertical tunnel-FET for low-power applications

MR Tripathy, AK Singh, A Samad… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This article investigates the performance of a vertically grown GaSb/Si tunnel field effect
transistor (V-TFET) with a source pocket to enhance the performance of the device. The …

Vertically-grown TFETs: an extensive analysis

AS Geege, TSA Samuel - Silicon, 2023 - Springer
TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …

Performance investigation of GaSb/Si heterojunction based gate underlap and overlap vertical TFET biosensor

A Theja, M Panchore - IEEE Transactions on NanoBioscience, 2022 - ieeexplore.ieee.org
The present paper estimates the performance of vertically developed double gate GaSb/Si
tunnel field-effect transistor (V-DGTFET) biosensor with source pocket. A commercially …

III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications

MR Tripathy, AK Singh, K Baral, PK Singh… - Superlattices and …, 2020 - Elsevier
This article presents a comparative study on the performance characteristics of some vertical
tunnel field effect transistor (TFET): conventional all-Si TFET with pocket, In 0.53 Ga 0.47 …

Performance analysis of heterojunction tunnel FET device with variable temperature

IA Pindoo, SK Sinha, S Chander - Applied Physics A, 2021 - Springer
In this paper, the analysis of SiGe source-based heterojunction Tunnel FET device is
reported. The parameters like transconductance (gm), device efficiency (gm/ID), gate-source …

Ge-source based L-shaped tunnel field effect transistor for low power switching application

S Chander, SK Sinha, R Chaudhary, A Singh - Silicon, 2021 - Springer
In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET)
has been analyzed with different engineering techniques such as bandgap engineering …

Improvement of electrical characteristics of SiGe source based tunnel FET device

IA Pindoo, SK Sinha, S Chander - Silicon, 2021 - Springer
Abstract Tunnel Field Effect Transistor (TFET) is one of the most promising alternative device
for semiconductor technology and shows better performance as compared to the …

Design and analysis of GaSb/Si based negative capacitance TFET at the device and circuit level

M Anas, SI Amin, MT Beg, A Anam, A Chunn, S Anand - Silicon, 2022 - Springer
In this paper, the design and performance analysis of GaSb/Si-based Negative Capacitance
(NC) Tunnel Field Effect Transistor (TFET) are comparatively analyzed at both device and …

Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): introduction to a BG-HJ-STEFT based …

AK Singh, MR Tripathy, K Baral, PK Singh, S Jit - Microelectronics journal, 2020 - Elsevier
This manuscript reports the back-gate effects on device-level performance of a
heterojunction TFET on SELBOX substrate (HJ-STFET). The proposed structure implements …

Effect of noise components on L-shaped and T-shaped heterojunction tunnel field effect transistors

S Chander, SK Sinha, R Chaudhary… - Semiconductor …, 2022 - iopscience.iop.org
This paper reports on a comparative study of the analysis of electrical noise of
heterojunction tunnelling-field-effect-transistors with an L-shaped gate (LTFET) and with a T …