Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Recent Advances of Photodetection Technology Based on Main Group III–V Semiconductors
J Ai, M Qin, M Xue, C Cao, J Zhang… - Advanced Functional …, 2024 - Wiley Online Library
The rapid advancement of main group III–V nanomaterials endows photodetectors (PDs)
with enhanced performance. At present, various III–V nanomaterials are systematically …
with enhanced performance. At present, various III–V nanomaterials are systematically …
[图书][B] Bismuth-containing alloys and nanostructures
S Wang, P Lu - 2019 - Springer
Bismuth (Bi), discovered in 1753, is the heaviest non-radioactive element in the periodic
table. The interest in using Bi in solid-state devices in early days was mainly focused on …
table. The interest in using Bi in solid-state devices in early days was mainly focused on …
[图书][B] Quaternary alloys based on II-VI semiconductors
V Tomashyk - 2014 - books.google.com
Doped by isovalent or heterovalent foreign impurities, II-VI semiconductor compounds
enable control of optical and electronic properties, making them ideal in detectors, solar …
enable control of optical and electronic properties, making them ideal in detectors, solar …
Optical and electrical characterization of InGaBiAs for use as a mid-infrared optoelectronic material
In 0.53 Ga 0.47 Bi x As 1− x films were grown on InP: Fe substrates by molecular beam
epitaxy, with Bi concentrations up to x= 3.60%. Bi content in the epilayers was determined by …
epitaxy, with Bi concentrations up to x= 3.60%. Bi content in the epilayers was determined by …
Demonstration of a 4.32 μm cutoff InAsSbBi nBn photodetector, a lattice-matched random alloy III–V solution for mid-wave infrared sensing
InAsSbBi nBn photodetectors are demonstrated that are lattice-matched to the underlying
GaSb substrate with a 4.32 μm wavelength cutoff at 150 K that is 0.3 μm longer than that of …
GaSb substrate with a 4.32 μm wavelength cutoff at 150 K that is 0.3 μm longer than that of …
Near infrared photoluminescence observed in dilute GaSbBi alloys grown by liquid phase epitaxy
We report the first observation of photoluminescence (PL) from the dilute bismide alloy
GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (100) …
GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (100) …
Temperature dependence of Bi behavior in MBE growth of InGaAs/InP
G Feng, K Oe, M Yoshimoto - Journal of crystal growth, 2007 - Elsevier
The behavior of bismuth (Bi) in the molecular beam epitaxy (MBE) growth of InGaAs/InP was
investigated in situ by reflection high energy electron diffraction (RHEED) and ex situ by X …
investigated in situ by reflection high energy electron diffraction (RHEED) and ex situ by X …
Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
Y Gu, K Wang, H Zhou, Y Li, C Cao, L Zhang… - Nanoscale research …, 2014 - Springer
InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum
Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray …
Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray …
InGaAsBi alloys on InP for efficient near-and mid-infrared light emitting devices
S Jin, S John Sweeney - Journal of Applied Physics, 2013 - pubs.aip.org
We present the band parameters such as band gap, spin-orbit splitting energy, band offsets
and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi …
and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi …