Influence of light waves on the effective electron mass in quantum wells, wires, inversion layers and superlattices

PK Bose, N Paitya, S Bhattacharya, D De… - Quantum …, 2012 - ingentaconnect.com
In this paper an attempt is made to study the effective electron mass (EEM) in quantum wells
(Qws), quantum wires (QWs), inversion layers (ILs), nipi's, quantum confined effective mass …

Interpretation of electron diffusion coefficient in organic and inorganic semiconductors with broad distributions of states

J Bisquert - Physical Chemistry Chemical Physics, 2008 - pubs.rsc.org
The carrier transport properties in nanocrystalline semiconductors and organic materials
play a key role for modern organic/inorganic devices such as dye-sensitized (DSC) and …

Influence of quantizing magnetic field on the effective electron mass in nonlinear optical, optoelectronic and related materials: Simplified theory and relative …

S Debbarma, A Bhattacharjee… - Journal of Advanced …, 2012 - ingentaconnect.com
In this paper we study the influence of quantizing magnetic field on the effective electron
mass (EEM) in nonlinear optical materials on the basis of a newly formulated electron …

Simple theoretical analysis of the effective electron mass in semiconductor nanowires

S Bhattachrya, N Paitya… - Journal of Computational …, 2013 - ingentaconnect.com
In this paper we study the effective electron mass (EEM) in Nano wires (NWs) of nonlinear
optical materials on the basis of newly formulated electron dispersion relation by …

Effective Electron Mass in Compound semiconductors and ultrathin films under cross fields configuration

SM Adhikari, D De, JK Baruah… - Advanced Science …, 2013 - ingentaconnect.com
In this paper, an attempt is made to study the effective electron mass (EEM) in nonlinear
optical, optoelectronic, II–VI, IV–VI, Bi and stressed material in the presence of crossed …

Influence of light on the Einstein relation in III–V, ternary and quaternary materials: Simplified theory and a suggestion for experimental determination

S Mukherjee, D De, DJ Mukherjee… - Physica B: Condensed …, 2007 - Elsevier
We study theoretically the energy spectrum of the conduction electrons and the Einstein
relation for the diffusivity–mobility ratio (DMR) for III–V, ternary and quaternary materials …

Effective electron mass in quantum wires of III–V, ternary and quaternary materials

N Paitya, KP Ghatak - Journal of Nanoscience and …, 2012 - ingentaconnect.com
In this paper, an attempt is made to study the effective electron mass (EEM) in Quantum
wires (QWs) of III–V, ternary and quaternary materials on the basis of three and two band …

[图书][B] Quantum Capacitance in Quantized Transistors

KP Ghatak, J Pal - 2024 - books.google.com
In recent years, there has been considerable interest in studying the quantum capacitance
(QC) in 2D quantum MOSFETs (QMOSFET) and 1D Nano Wire FET (NWFET) devices of …

The Effective Electron Mass in Quantum Wells of Nonlinear Optical, III–V, Ternary and Quaternary Materials

PK Bose, S Bhattacharya, D De… - Advanced Science …, 2013 - ingentaconnect.com
An attempt is made to study the two dimensional (2D) effective electron mass (EEM) in
quantum wells (QWs) of nonlinear optical materials on the basis of a newly formulated …

Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III–V, Ternary and Quaternary Semiconductors

S Chakrabarti, B Chatterjee… - … of Nanoscience and …, 2015 - ingentaconnect.com
In this paper we study the influence of strong electric field on the two dimensional (2D)
effective electron mass (EEM) at the Fermi level in quantum wells of III–V, ternary and …