Artificial neuron and synapse devices based on 2D materials
Neuromorphic systems, which emulate neural functionalities of a human brain, are
considered to be an attractive next‐generation computing approach, with advantages of …
considered to be an attractive next‐generation computing approach, with advantages of …
Quantum conductance in memristive devices: fundamentals, developments, and applications
Quantum effects in novel functional materials and new device concepts represent a potential
breakthrough for the development of new information processing technologies based on …
breakthrough for the development of new information processing technologies based on …
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Resistance switching in metal oxides could form the basis for next-generation non-volatile
memory. It has been argued that the current in the high-conductivity state of several …
memory. It has been argued that the current in the high-conductivity state of several …
High mobility in a stable transparent perovskite oxide
We discovered that La-doped BaSnO 3 with the perovskite structure has an
unprecedentedly high mobility at room temperature while retaining its optical transparency …
unprecedentedly high mobility at room temperature while retaining its optical transparency …
Origin of the ultra‐nonlinear switching kinetics in oxide‐based resistive switches
S Menzel, M Waters, A Marchewka… - Advanced Functional …, 2011 - Wiley Online Library
Experimental pulse length–pulse voltage studies of SrTiO3 memristive cells are reported,
which reveal nonlinearities in the switching kinetics of more than nine orders of magnitude …
which reveal nonlinearities in the switching kinetics of more than nine orders of magnitude …
TiO2-based memristors and ReRAM: materials, mechanisms and models (a review)
E Gale - Semiconductor Science and Technology, 2014 - iopscience.iop.org
The memristor is the fundamental nonlinear circuit element, with uses in computing and
computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching …
computer memory. Resistive Random Access Memory (ReRAM) is a resistive switching …
Probing memristive switching in nanoionic devices
Y Yang, R Huang - Nature Electronics, 2018 - nature.com
Memristive switching in nanoionic devices involves the interplay between physical,
electrochemical and thermochemical processes, which can occur in the bulk or at interfaces …
electrochemical and thermochemical processes, which can occur in the bulk or at interfaces …
[HTML][HTML] Nonvolatile resistive switching memories-characteristics, mechanisms and challenges
This review presents a summary of current understanding of the resistive switching materials
and devices which have inspired extraordinary interest all over the world. Although various …
and devices which have inspired extraordinary interest all over the world. Although various …
Thermochemical resistive switching: materials, mechanisms, and scaling projections
In this article, resistive switching based on the thermochemical mechanism (TCM) is
reviewed. This mechanism is observed when thermochemical redox processes dominate …
reviewed. This mechanism is observed when thermochemical redox processes dominate …
Conductance quantization in resistive random access memory
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure,
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …
excellent performances, and complementary metal-oxide-semiconductor (CMOS) …