Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys
I Gorczyca, SP Łepkowski, T Suski, NE Christensen… - Physical Review B …, 2009 - APS
The electronic band structures of In x Ga 1− x N, In x Al 1− x N, and In x Ga y Al 1− x− y N
alloys are calculated by ab initio methods using a supercell geometry, and the effects of …
alloys are calculated by ab initio methods using a supercell geometry, and the effects of …
Cathodoluminescence nano-characterization of semiconductors
PR Edwards, RW Martin - Semiconductor Science and …, 2011 - iopscience.iop.org
We give an overview of the use of cathodoluminescence (CL) in scanning electron
microscopy (SEM) for the nano-scale characterization of semiconducting materials and …
microscopy (SEM) for the nano-scale characterization of semiconducting materials and …
Composition-dependent band gap and band-edge bowing in AlInN: A combined theoretical and experimental study
A combined experimental and theoretical study of the band gap of AlInN is presented, which
confirms the breakdown of the virtual crystal approximation (VCA) for the conduction and …
confirms the breakdown of the virtual crystal approximation (VCA) for the conduction and …
Band gap bowing and optical polarization switching in Al Ga N alloys
We present a detailed theoretical study of the band gap bowing of wurtzite AlGaN alloys
over the full composition range. Our theoretical framework is based on an atomistic tight …
over the full composition range. Our theoretical framework is based on an atomistic tight …
Dielectric function and optical properties of Al-rich AlInN alloys pseudomorphically grown on GaN
E Sakalauskas, H Behmenburg, C Hums… - Journal of Physics D …, 2010 - iopscience.iop.org
A detailed discussion of the optical properties of Al-rich Al 1− x In x N alloy films is
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
presented. The (0 0 0 1)-oriented layers with In contents between x= 0.143 and x= 0.242 …
Bandgap and refractive index estimates of InAlN and related nitrides across their full composition ranges
III-Nitride bandgap and refractive index data are of direct relevance for the design of (In, Ga,
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …
Al) N-based photonic and electronic devices. The bandgaps and bandgap bowing …
Theoretical study of nitride short period superlattices
I Gorczyca, T Suski, NE Christensen… - Journal of Physics …, 2018 - iopscience.iop.org
Discussion of band gap behavior based on first principles calculations of electronic band
structures for various short period nitride superlattices is presented. Binary superlattices, as …
structures for various short period nitride superlattices is presented. Binary superlattices, as …
Band gap bowing parameter of In1− xAlxN
We report a band gap bowing parameter for In 1− x Al x N of 4.7 eV from a study of high
quality and homogenous samples with x= 0.017–0.60. Optical absorption data were …
quality and homogenous samples with x= 0.017–0.60. Optical absorption data were …
Defect‐Resistant Radiative Performance of m‐Plane Immiscible Al1−xInxN Epitaxial Nanostructures for Deep‐Ultraviolet and Visible Polarized Light Emitters
Planar vacuum‐fluorescent‐display devices emitting polarized UV‐C, blue, and green light
are demonstrated using immiscible Al 1− x In x N nanostructures grown in nonpolar m …
are demonstrated using immiscible Al 1− x In x N nanostructures grown in nonpolar m …
Sub-bandgap optical absorption processes in 300-nm-thick Al1− xInxN alloys grown on a c-plane GaN/sapphire template
D Imai, Y Murakami, H Toyoda, K Noda… - Journal of Applied …, 2024 - pubs.aip.org
We investigate the sub-bandgap optical absorption (SOA) in 300-nm-thick Al1− xInxN alloys
used in cladding layers of edge-emitting laser diodes and distributed Bragg reflectors of …
used in cladding layers of edge-emitting laser diodes and distributed Bragg reflectors of …