[HTML][HTML] Atom probe tomography today
A Cerezo, PH Clifton, MJ Galtrey, CJ Humphreys… - Materials Today, 2007 - Elsevier
This review aims to describe and illustrate the advances in the application of atom probe
tomography that have been made possible by recent developments, particularly in specimen …
tomography that have been made possible by recent developments, particularly in specimen …
[图书][B] Epitaxy of nanostructures
The general trend in modern solid state physics and technology is to make things smaller.
The size of key elements in modern devices approaches the nanometer scale, for both …
The size of key elements in modern devices approaches the nanometer scale, for both …
Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope
TM Smeeton, MJ Kappers, JS Barnard… - Applied physics …, 2003 - pubs.aip.org
InGaN quantum wells have been found to be extremely sensitive to exposure to the electron
beam in the transmission electron microscope (TEM). High-resolution TEM images acquired …
beam in the transmission electron microscope (TEM). High-resolution TEM images acquired …
Carrier localization mechanisms in InGaN/GaN quantum wells
Localization lengths of the electrons and holes in InGaN/GaN quantum wells have been
calculated using numerical solutions of the effective mass Schrödinger equation. We have …
calculated using numerical solutions of the effective mass Schrödinger equation. We have …
Optical and microstructural studies of InGaN∕ GaN single-quantum-well structures
We have studied the low-temperature (T= 6 K) optical properties of a series of In Ga N∕ Ga
N single-quantum-well structures with varying indium fractions. With increasing indium …
N single-quantum-well structures with varying indium fractions. With increasing indium …
Three-dimensional atom probe studies of an InxGa1− xN∕ GaN multiple quantum well structure: Assessment of possible indium clustering
MJ Galtrey, RA Oliver, MJ Kappers… - Applied physics …, 2007 - pubs.aip.org
An In x Ga 1− x N∕ Ga N multiple quantum well (MQW) structure that exhibited bright
photoluminescence was examined with the three-dimensional atom probe. The quantum …
photoluminescence was examined with the three-dimensional atom probe. The quantum …
Extracting quantitative information from high resolution electron microscopy
S Kret, P Ruterana, A Rosenauer… - physica status solidi …, 2001 - Wiley Online Library
Despite the development of high‐resolution electron microscopy (HREM) that allows
imaging of most materials, the extraction of quantitative information at atomic scale still …
imaging of most materials, the extraction of quantitative information at atomic scale still …
Microstructural origins of localization in InGaN quantum wells
The startling success of GaN-based light emitting diodes despite the high density of
dislocations found in typical heteroepitaxial material has been attributed to localization of …
dislocations found in typical heteroepitaxial material has been attributed to localization of …
Three-dimensional atom probe analysis of green-and blue-emitting InxGa1− xN∕ GaN multiple quantum well structures
MJ Galtrey, RA Oliver, MJ Kappers… - Journal of Applied …, 2008 - pubs.aip.org
The three-dimensional atom probe has been used to characterize green-and blue-emitting
In x Ga 1− x N∕ Ga N multiple quantum well structures with subnanometer resolution over a …
In x Ga 1− x N∕ Ga N multiple quantum well structures with subnanometer resolution over a …
Does In form In-rich clusters in InGaN quantum wells?
CJ Humphreys - Philosophical Magazine, 2007 - Taylor & Francis
The reason the InGaN/GaN quantum well system emits intense light even though the
dislocation density is high is assessed. First, the evidence from electron microscopy for …
dislocation density is high is assessed. First, the evidence from electron microscopy for …