Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
A review of switching oscillations of wide bandgap semiconductor devices
J Chen, X Du, Q Luo, X Zhang, P Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …
high power density to power converters due to their excellent performance. However, their …
A survey of EMI research in power electronics systems with wide-bandgap semiconductor devices
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due
to their superior characteristics compared to their Si counterparts. However, their fast …
to their superior characteristics compared to their Si counterparts. However, their fast …
Further Evidence on The Link Between Firm'S Control Mechanisms and Firm Financial Performance: Sultanate of Oman
ER Ahmed, TTY Alabdullah… - … of Governance and …, 2020 - journal.ump.edu.my
Based on the agency theory perspective and its corporate governance problem, the current
study investigated how control mechanisms affect firm financial performance with a special …
study investigated how control mechanisms affect firm financial performance with a special …
Soliton formation and spectral translation into visible on CMOS-compatible 4H-silicon-carbide-on-insulator platform
Recent advancements in integrated soliton microcombs open the route to a wide range of
chip-based communication, sensing, and metrology applications. The technology translation …
chip-based communication, sensing, and metrology applications. The technology translation …
Observation of transient parity-time symmetry in electronic systems
We demonstrate the transient parity-time (PT) symmetry in electronics. It is revealed by
equivalent circuit transformation according to the switching states of electronic systems. With …
equivalent circuit transformation according to the switching states of electronic systems. With …
Overview of high voltage SiC power semiconductor devices: Development and application
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …
attracted much attention in recent years. This paper overviews the development and status …
A novel active gate driver for improving SiC MOSFET switching trajectory
AP Camacho, V Sala, H Ghorbani… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
The trend in power electronic applications is to reach higher power density and higher
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …
efficiency. Currently, the wide band-gap devices such as silicon carbide MOSFET (SiC …
A novel active gate driver for improving switching performance of high-power SiC MOSFET modules
Y Yang, Y Wen, Y Gao - IEEE Transactions on Power …, 2018 - ieeexplore.ieee.org
Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC
mosfets) are widely used in higher power density and higher efficiency power electronic …
mosfets) are widely used in higher power density and higher efficiency power electronic …
Temperature-dependent characterization, modeling, and switching speed-limitation analysis of third-generation 10-kV SiC MOSFET
The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET
including the static characteristics and switching performance are carried out in this paper …
including the static characteristics and switching performance are carried out in this paper …