Nanowire-based technological advancements thrive in various fields, including energy
generation and storage, sensors, and electronics. Among the identified nanowires, silicon …

Nanoscale sensors usually produce feeble signals susceptible to inevitable external
interference. Several signal amplification solutions exist for mitigating the interference …

Random trapping and detrapping of charged carriers in the vicinity of gate oxide/Si interface
has for long been considered as the dominant noise source in Si nanowire (SiNW) FET …

In this paper the simulation of junction less tri-gate nano-channel FinFET is carried out to
evaluate and study its different DC and AC/RF characteristics. The Drain Induced Barrier …

In this letter, strong low frequency noise (LFN) reduction is observed when the buried oxide
(BOX)/silicon interface of a Schottky junction gated silicon nanowire field-effect transistor …

Rapid and reliable antibiotic susceptibility testing (AST) is urgently required to diagnose
bacterial infectious diseases and avoid antibiotic misuse, providing valuable information on …

Due to the outstanding electrostatic integrity of nanowire (NW) gate all-around (GAA) field-
effect transistors (FETs), these devices have emerged as the most promising transistor …

The structure of 3-dimensional (3D) nanowire MUGFET is proposed. The simulation results
are based on the study of electrical parameters such as electrical potential, charge density …

In this work, low frequency noise (LFN) in Schottky junction trigate silicon nanowire (SiNW)
field-effect transistors (FETs)(SJGFETs) fabricated on bonded silicon on insulator (SOI) …

Nanowires have gained huge interest for electronic, optic, and optoelectronic device
applications. Therefore, it is useful and important to study the charge transport methods of …