The large variety of 2D materials and their co-integration in van der Waals heterostructures
enable innovative device engineering. In addition, their atomically thin nature promotes the …

Atomic defects, being the most prevalent zero-dimensional topological defects, are
ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be …

Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new
capabilities to the microelectronics industry. However, in order for spintronic devices to meet …

Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

The scaling of complementary metal–oxide–semiconductor (CMOS) technology is
increasingly challenging, but demand for low-power data storage and processing continues …

After the first unequivocal demonstration of spin transport in graphene [Tombros et al.,
Nature (London) 448, 571–574 (2007)], surprisingly at room temperature, it was quickly …

Magic-angle twisted bilayer graphene (TBG), with rotational misalignment close to 1.1
degrees, features isolated flat electronic bands that host a rich phase diagram of correlated …

The pervasiveness of information technologies is generating an impressive amount of data,
which need to be accessed very quickly. Nonvolatile memories (NVMs) are making inroads …

Graphene is an excellent material for long-distance spin transport but allows little spin
manipulation. Transition-metal dichalcogenides imprint their strong spin–orbit coupling into …

Spin–orbit coupling stands as a powerful tool to interconvert charge and spin currents and to
manipulate the magnetization of magnetic materials through spin-torque phenomena …