Wide-bandgap power semiconductors for electric vehicle systems: Challenges and trends
T Van Do, JPF Trovão, K Li… - IEEE Vehicular …, 2021 - ieeexplore.ieee.org
In recent years, researchers have been attracted to the application of wide-bandgap (WBG)
power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in …
power semiconductor devices such as silicon carbide (SiC) and gallium nitride (GaN) in …
A Fast and Accurate GaN Power Transistor Model and Its Application for Electric Vehicle
In order to overcome the challenge of balancing accuracy with simulation speed of power
electronics converters for system-level simulation, the paper proposes a GaN power …
electronics converters for system-level simulation, the paper proposes a GaN power …
Modelling GaN-HEMT dynamic on-state resistance in high frequency power converter
In order to model GaN device dynamic R DSon value due to trapped charge, a
measurement circuit to accurately measure device dynamic R DSon value under different …
measurement circuit to accurately measure device dynamic R DSon value under different …
Reviewing of using wide-bandgap power semiconductor devices in electric vehicle systems: From component to system
The application of wide-bandgap (WBG) power semiconductor devices (silicon carbide and
gallium nitride) in EV power electronics systems has a huge potential to increase EV …
gallium nitride) in EV power electronics systems has a huge potential to increase EV …
Analysis of GaN converter circuit stability influenced by current collapse effect
GaN transistors allow to design highly efficient and high power density converters due to
their low conduction and switching losses. However, their very fast switching and low gate …
their low conduction and switching losses. However, their very fast switching and low gate …
Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours
This work investigates the power GaN-HEMTs switching behaviour differences resulted from
usage of two gate driving configurations: single and split outputs. The analysis based on …
usage of two gate driving configurations: single and split outputs. The analysis based on …
A Flexible Setup for Dynamic On-State Resistance Measurements of GaN HEMTs With One-Factor-at-a-Time Capability
MCJ Weiser, V Köhnlein… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
A measurement circuit for the characterization of trapping effects in GaN HEMTs is
presented. The circuit is based on the operating principle of separating the high-voltage …
presented. The circuit is based on the operating principle of separating the high-voltage …
Current Collapse Conduction Losses Minimization in GaN Based PMSM Drive
The ever-increasing demands on the efficiency and power density of power electronics
converters lead to the replacement of traditional silicon-based components with new …
converters lead to the replacement of traditional silicon-based components with new …
Impact of Instability of Schottky-type p-GaN Gate HEMTs on Switching Behaviors
Schottky-type p-GaN gate Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs)
suffer from threshold voltage () instability phenomenon. Both positive and negative shifts are …
suffer from threshold voltage () instability phenomenon. Both positive and negative shifts are …
Influence of Current Collapse due to Bias Effect on GaN-HEMTs Characteristics in Saturation Region
A new method is proposed in this paper to investigate the influence of current collapse effect
on the I_d-V_ds characteristics of GaN-HEMTs in high voltage region based on a modified H …
on the I_d-V_ds characteristics of GaN-HEMTs in high voltage region based on a modified H …