A comprehensive review on FinFET in terms of its device structure and performance matrices

MN Reddy, DK Panda - Silicon, 2022 - Springer
The revolutions made in the CMOS technology are brought up by, continuous downscaling
in order to obtain higher density, better performance and low power consumption, causing …

A carbon nano-tube field effect transistor based stable, low-power 8T static random access memory cell with improved write access time

A Sachdeva, D Kumar, E Abbasian - AEU-International Journal of …, 2023 - Elsevier
Carbon nanotube field effect transistor (CNTFET) is swiftly becoming an alternative to
conventional CMOS transistors due to superior transport properties, improved current …

Performance analysis of metal gate engineered junctionless nanosheet fet with a ft/fmax of 224/342ghz for beyond 5g (b5g) applications

S Valasa, S Tayal, LR Thoutam - Micro and Nanostructures, 2023 - Elsevier
This manuscript for the first time investigates the effect of Dual Metal on Gate Junctionless
Nanosheet FET (DMG-JL-NSFET) for analog/RF applications. The entire analysis is …

[HTML][HTML] Comprehensive Review of FinFET Technology: History, Structure, Challenges, Innovations, and Emerging Sensing Applications

K Karimi, A Fardoost, M Javanmard - Micromachines, 2024 - mdpi.com
The surge in demand for 3D MOSFETs, such as FinFETs, driven by recent technological
advances, is explored in this review. FinFETs, positioned as promising alternatives to bulk …

Characterisation of graphene nano-ribbon field effect transistor and design of high performance PPN 12T GNRFET Full adder

M Elangovan, K Sharma, A Sachdeva - Physica Scripta, 2023 - iopscience.iop.org
Owing to the balanced electrical properties of graphene nanoribbon field effect transistors
(GNRFETs), they are suitable next-generation devices for designing high performance …

Performance evaluation of spacer dielectric engineered vertically stacked junctionless nanosheet FET for sub-5 nm technology node

S Valasa, S Tayal, LR Thoutam - ECS Journal of Solid State …, 2022 - iopscience.iop.org
This manuscript for the first time provides insights on the impact of different spacer materials
for the vertically stacked Junctionless Nanosheet Field Effect Transistor (JL-NSFET). The …

Short-Channel Effect Suppression and Footprint Reduction in Double Gate-All-Around Field Effect Transistors and Inverters Based on Two-Dimensional Materials

L Qin, H Tian, P Zhang, Z Liu, Y Shen… - ACS Applied …, 2024 - ACS Publications
The incessant reduction of transistor dimensions requires new transformations in devices or
novel materials to further sustain Moore's law. From the 5 nm technology node and beyond …

[PDF][PDF] Development and control of an upper limb rehabilitation robot via ant colony optimization-PID and fuzzy-PID controllers

N Mirrashid, ŮŤE Alibeiki, SM Rakhtala - International Journal of engineering, 2022 - ije.ir
The control of movement rehabilitation robots is necessary for the recovery of physically
disabled patients and is an interesting open problem. This paper presents a mathematical …

[HTML][HTML] Gate electrostatic controllability enhancement in nanotube gate all around field effect transistor

L Qin, C Li, Y Wei, Z Xie, J He - AIP Advances, 2023 - pubs.aip.org
Recently, short channel effects (SCE) and power consumption dissipation problems impose
tremendous challenges that need imperative actions to be taken to deal with for field effect …

[HTML][HTML] Brain-inspired computing: can 2D materials bridge the gap between biological and artificial neural networks?

DK Singh, G Gupta - Materials Advances, 2024 - pubs.rsc.org
This modern era of technology with data flood actively demands the development of
excellent non-volatile storage (NVS) and computing devices, which can overcome the …