Ferroelectric field effect transistors (FeFETs): advancements, challenges and exciting prospects for next generation non-volatile memory (NVM) applications
Data intensive applications such as AI (Artificial Intelligence) and IoT (Internet of Things)
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
demand high performance and highly reliable non-volatile memories (NVM). FeFET offers …
Emerging Optoelectronic Devices for Brain‐Inspired Computing
L Hu, X Zhuge, J Wang, X Wei, L Zhang… - Advanced Electronic …, 2024 - Wiley Online Library
Brain‐inspired neuromorphic computing is recognized as a promising technology for
implementing human intelligence in hardware. Neuromorphic devices, including artificial …
implementing human intelligence in hardware. Neuromorphic devices, including artificial …
Random and Systematic Variation in Nanoscale Hf0.5Zr0.5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications
This work presents 2-bits/cell operation in deeply scaled ferroelectric finFETs (Fe-finFET)
with a 1 µs write pulse of maximum±5 V amplitude and WRITE endurance above 109 cycles …
with a 1 µs write pulse of maximum±5 V amplitude and WRITE endurance above 109 cycles …
HfO2-ZrO2 Superlattice Ferroelectric Capacitor With Improved Endurance Performance and Higher Fatigue Recovery Capability
Y Peng, W Xiao, Y Liu, C Jin, X Deng… - IEEE Electron …, 2021 - ieeexplore.ieee.org
HfO 2-ZrO 2 superlattice (SL) ferroelectric (FE) capacitor is demonstrated to have improved
endurance performance and higher fatigue recovery capability compared to the HfZrO x …
endurance performance and higher fatigue recovery capability compared to the HfZrO x …
Uniform crystal formation and electrical variability reduction in hafnium-oxide-based ferroelectric memory by thermal engineering
In this paper, we achieved excellent variation control, endurance enhancement, and
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf1–x Zr x O2) based ferroelectric …
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability
The ferroelectric polarization stability and dielectric characteristics of ZrO 2-HfO 2
superlattice (SL) ferroelectric layer Metal-Ferroelectric-Metal (MFM) capacitor fabricated with …
superlattice (SL) ferroelectric layer Metal-Ferroelectric-Metal (MFM) capacitor fabricated with …
Computationally efficient compact model for ferroelectric field-effect transistors to simulate the online training of neural networks
In this paper, a compact drain current formulation that is simple and adequately
computationally efficient for the simulation of neural network online training was developed …
computationally efficient for the simulation of neural network online training was developed …
Impact of charges at ferroelectric/interlayer interface on depolarization field of ferroelectric FET with metal/ferroelectric/interlayer/Si gate-stack
X Wang, X Sun, Y Zhang, L Zhou… - … on Electron Devices, 2020 - ieeexplore.ieee.org
This article theoretically investigates the impact of charges at the ferroelectric/interlayer
interface on the depolarization field of ferroelectric FET (FeFET) with metal/ferroelectric …
interface on the depolarization field of ferroelectric FET (FeFET) with metal/ferroelectric …
Memory Behavior of an Al2O3 Gate Dielectric Non-Volatile Field-Effect Transistor
Non-volatile field-effect transistor (FET) with amorphous Al 2 O 3 dielectric is demonstrated
on Si substrate, which is enabled by the voltage modulation of the oxygen vacancy and …
on Si substrate, which is enabled by the voltage modulation of the oxygen vacancy and …
Ferroelectric vertical gate-all-around field-effect-transistors with high speed, high density, and large memory window
W Huang, H Zhu, Y Zhang, X Yin, X Ai… - IEEE Electron …, 2021 - ieeexplore.ieee.org
Ferroelectric vertical gate-all-around field-effect-transistor (Fe-VGAAFET) suits a memory
cell with a 5 nm technology node and beyond since it is less constrained by gate length …
cell with a 5 nm technology node and beyond since it is less constrained by gate length …