Structural and insulating behaviour of high-permittivity binary oxide thin films for silicon carbide and gallium nitride electronic devices
High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These
materials have already found application in microelectronics, mainly as gate insulators or …
materials have already found application in microelectronics, mainly as gate insulators or …
Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors
S Latrach, E Frayssinet, N Defrance, S Chenot… - Current Applied …, 2017 - Elsevier
The paper deals with trap effects in InAlN/AlN/GaN and AlGaN/AlN/GaN high electron
mobility transistor structures using frequency dependent conductance and High-Low …
mobility transistor structures using frequency dependent conductance and High-Low …
Physics and technology of gallium nitride materials for power electronics
Owing to its exceptional physical and electronic properties, gallium nitride (GaN) is a
promising material that can find application in the fields of high-power and high-frequency …
promising material that can find application in the fields of high-power and high-frequency …
The influence of Fe doping tail in unintentionally doped GaN layer on DC and RF performance of AlGaN/GaN HEMTs
In this work, the performance of AlGaN/gallium nitride (GaN) high-electron mobility
transistors (HEMTs) with different Fe doping tails was systematically investigated and …
transistors (HEMTs) with different Fe doping tails was systematically investigated and …
Channel Mobility in GaN Hybrid MOS-HEMT Using SiO2 as Gate Insulator
The channel mobility in SiO 2/GaN hybrid metal-oxide-semiconductor high-electron-mobility
transistors (MOS-HEMTs) has been studied. The formalism used for the inversion mobility in …
transistors (MOS-HEMTs) has been studied. The formalism used for the inversion mobility in …
Fast and slow interface traps in transparent NiO gated AlGaN/GaN heterostructure field-effect transistors
L Li, J Chen, Z Liu, T Que, X Gu, L He, Y Liu - Applied Surface Science, 2019 - Elsevier
In the present study, the reliability of transparent NiO gated AlGaN/GaN heterostructure field-
effect transistors have been investigated. Compared with the TiN Schottky gated device, the …
effect transistors have been investigated. Compared with the TiN Schottky gated device, the …
Demonstration of vertically-ordered h-BN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Si substrate
M Whiteside, S Arulkumaran, GI Ng - Materials Science and Engineering: B, 2021 - Elsevier
AlGaN/GaN metal–insulator-semiconductor high-electron-mobility transistors (MISHEMTs)
have been demonstrated with 22 nm thick vertically ordered (VO) h-BN by high-power …
have been demonstrated with 22 nm thick vertically ordered (VO) h-BN by high-power …
Conduction mechanisms at interface of AlN/SiN dielectric stacks with AlGaN/GaN heterostructures for normally-off high electron mobility transistors: Correlating device …
In this work, the conduction mechanisms at the interface of AlN/SiN dielectric stacks with
AlGaN/GaN heterostructures have been studied combining different macroscopic and …
AlGaN/GaN heterostructures have been studied combining different macroscopic and …
Low frequency noise and gate bias instability in normally OFF AlGaN/GaN HEMTs
In this brief, traps-related dispersion phenomena are investigated on GaN/AlGaN MOS-high-
electron mobility transistors. Pulsed IV characteristics and low-frequency-noise …
electron mobility transistors. Pulsed IV characteristics and low-frequency-noise …
Effects of interface states and near interface traps on the threshold voltage stability of GaN and SiC transistors employing SiO2 as gate dielectric
This paper reports on the effects of interface states and near interface traps on the behavior
of GaN and SiC transistors employing SiO 2 as gate dielectric, emphasizing the role of these …
of GaN and SiC transistors employing SiO 2 as gate dielectric, emphasizing the role of these …