GaN is a great material for making optoelectronic devices in the blue, blue-violet and green
bands. Vertical-cavity surface-emitting lasers (VCSELs) have many advantages including …

Physical mechanisms causing the efficiency droop in InGaN/GaN blue light-emitting diodes
and remedies proposed for droop mitigation are classified and reviewed. Droop …

The optoelectronic characteristics of AlGaN-based deep ultraviolet light-emitting diodes
(DUV LEDs) with AlInGaN/AlInN superlattices electron blocking layer (EBL) are numerically …

Featured Application Since 'green-gap'is a challenging issue which is of great interest to the
community, we present and analyze bandgap-engineered W-shaped quantum well, as a …

In this work, we have investigated the origin of efficiency droop for AlGaN-based deep
ultraviolet light-emitting diodes (DUV LEDs). We find that the efficiency droop is likely to be …

In this report, the improved lasing performance of the III-nitride based vertical-cavity surface-
emitting laser (VCSEL) has been demonstrated by replacing the bulk AlGaN electron …

We present an engineered wedge-shaped electron blocking layer to tackle the issue of hole
injection and transport into the active region. Poor hole injection and transport are one of the …

This work reports the enhanced optoelectronic performance of AlGaN-based deep ultraviolet
light-emitting diodes (DUV LEDs) by sandwiching p-EBL with thin p-AlInN layers. The …

Electron leakage in the active region decreases the internal quantum efficiency and
impedes the performance of gallium nitride (GaN)-based vertical-cavity surface-emitting …

InGaN/GaN light-emitting diodes (LEDs) with graded-thickness quantum barriers (GTQB) are
designed and grown by metal-organic chemical-vapor deposition. The proposed GTQB …