A review on the physical mechanisms that limit the reliability of GaN-based LEDs
We review the failure modes and mechanisms of gallium nitride (GaN)-based light-emitting
diodes (LEDs). A number of reliability tests are presented, and specific degradation …
diodes (LEDs). A number of reliability tests are presented, and specific degradation …
A review on the reliability of GaN-based LEDs
M Meneghini, LR Trevisanello… - … on Device and …, 2008 - ieeexplore.ieee.org
We review the degradation mechanisms that limit the reliability of GaN-based light-emitting
diodes (LEDs). We propose a set of specific experiments, which is aimed at separately …
diodes (LEDs). We propose a set of specific experiments, which is aimed at separately …
A 1.86-kV double-layered NiO/β-Ga2O3 vertical p–n heterojunction diode
In this Letter, high-performance vertical NiO/β-Ga 2 O 3 p–n heterojunction diodes without
any electric field managements were reported. The devices show a low leakage current …
any electric field managements were reported. The devices show a low leakage current …
Measurement of transient temperature using laser-induced breakdown spectroscopy (LIBS) with the surface temperature effect
A method based on LIBS technology for measuring transient surface temperatures with a
time resolution of several μs was proposed in this study, which holds great significance for …
time resolution of several μs was proposed in this study, which holds great significance for …
[图书][B] Light-emitting diodes (2018)
EF Schubert - 2018 - books.google.com
The 1st edition of the book “Light-Emitting Diodes” was published in 2003. The 2nd edition
was published in 2006. The current 3rd edition of the book, a substantial expansion of the …
was published in 2006. The current 3rd edition of the book, a substantial expansion of the …
[图书][B] Organic light emitting devices: synthesis, properties and applications
K Müllen, U Scherf - 2006 - books.google.com
This high-class book reflects a decade of intense research, culminating in excellent
successes over the last few years. The contributions from both academia as well as the …
successes over the last few years. The contributions from both academia as well as the …
Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs
AA Efremov, NI Bochkareva, RI Gorbunov… - Semiconductors, 2006 - Springer
The heat model of a light-emitting diode (LED) with an InGaN/GaN quantum well (QW) in the
active region is considered. Effects of the temperature and drive current, as well as of the …
active region is considered. Effects of the temperature and drive current, as well as of the …
Highly Stable Silica-Wrapped Mn-Doped CsPbCl3 Quantum Dots for Bright White Light-Emitting Devices
As an outstanding less-Pb candidate, doping Mn2+ ions into perovskite quantum dots (QDs)
has received significant interest in the application of light-emitting diodes (LEDs). However …
has received significant interest in the application of light-emitting diodes (LEDs). However …
Breakthrough short circuit robustness demonstrated in vertical GaN Fin JFET
Insufficient short-circuit (SC) robustness of currently commercial GaN power devices, ie, the
high electron mobility transistors (HEMTs), is a key roadblock for their applications in …
high electron mobility transistors (HEMTs), is a key roadblock for their applications in …
Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact
JO Song, JS Ha, TY Seong - IEEE transactions on electron …, 2009 - ieeexplore.ieee.org
GaN-based semiconductors are of great technological importance for the fabrication of
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …