Stability, reliability, and robustness of GaN power devices: A review
Gallium nitride (GaN) devices are revolutionarily advancing the efficiency, frequency, and
form factor of power electronics. However, the material composition, architecture, and …
form factor of power electronics. However, the material composition, architecture, and …
Surge-energy and overvoltage ruggedness of P-gate GaN HEMTs
An essential ruggedness of power devices is the capability of safely withstanding the surge
energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power …
energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power …
Robustness of cascode GaN HEMTs in unclamped inductive switching
Surge-energy robustness is essential for power devices in many applications such as
automotive powertrains and electricity grids. While Si and SiC mosfet s can dissipate surge …
automotive powertrains and electricity grids. While Si and SiC mosfet s can dissipate surge …
Degradation and recovery of GaN HEMTs in overvoltage hard switching near breakdown voltage
GaN high electron mobility transistors (HEMTs) have limited avalanche capability and
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
usually fail catastrophically in voltage overshoot up to their dynamic breakdown voltage (BV …
Dynamic breakdown voltage of GaN power HEMTs
This work develops a new method to measure the transient breakdown voltage (BV) of a non-
avalanche device in ultra-short pulses, based on the unclamped inductive switching (UIS) …
avalanche device in ultra-short pulses, based on the unclamped inductive switching (UIS) …
In-situ RDS(on) Characterization and Lifetime Projection of GaN HEMTs Under Repetitive Overvoltage Switching
R Zhang, R Garcia, R Strittmatter… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Transient voltage overshoot is a common phenomenon in GaN high electron mobility
transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric …
transistors (HEMTs) under high slew rate switching conditions. The dynamic parametric …
Overvoltage robustness of p-Gate GaN HEMTs in high frequency switching up to megahertz
This article investigates the ruggedness of the GaN high electron mobility transistor (HEMT),
a power device without avalanche capability, in continuous, high-frequency, overvoltage …
a power device without avalanche capability, in continuous, high-frequency, overvoltage …
[HTML][HTML] GaN-on-GaN pin diodes with avalanche capability enabled by eliminating surface leakage with hydrogen plasma treatment
Traditional mesa terminations require precise angle design to reduce the electric field at the
edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a …
edge and surface treatment to reduce etch damage. Otherwise, the device usually suffers a …
Temperature and doping dependence of phonon lifetimes and decay pathways in GaN
The lifetimes of polar optical phonons are known to affect both the electrical and thermal
performances of gallium nitride (GaN) based devices. Hence, understanding the dynamical …
performances of gallium nitride (GaN) based devices. Hence, understanding the dynamical …
Observation and characterization of impact ionization-induced OFF-state breakdown in Schottky-type p-GaN gate HEMTs
In this work, the impact ionization-induced OFF-state breakdown is revealed and
systematically investigated in 100 V Schottky-type p-GaN gate high-electron-mobility …
systematically investigated in 100 V Schottky-type p-GaN gate high-electron-mobility …