InAs/GaAs quantum-dot lasers grown on on-axis Si (001) without dislocation filter layers
Y Wang, B Ma, J Li, Z Liu, C Jiang, C Li, H Liu… - Optics …, 2023 - opg.optica.org
InAs/GaAs quantum dot (QD) laser monolithically grown on silicon is one of the potential
approaches to realizing silicon-based light sources. However, the mismatch between GaAs …
approaches to realizing silicon-based light sources. However, the mismatch between GaAs …
Low-threshold 2 µm InAs/InP quantum dash lasers enabled by punctuated growth
2 µm photonics and optoelectronics is promising for potential applications such as optical
communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on …
communications, LiDAR, and chemical sensing. While the research on 2 µm detectors is on …
Low Dark Current and High Speed InGaAs Photodiode on CMOS-Compatible Silicon by Heteroepitaxy
Top-illuminated proof-of-concept indium gallium arsenide (InGaAs) photodiode (PD) array
and high speed InGaAs PDs were realized on (001) silicon (Si) substrate by direct …
and high speed InGaAs PDs were realized on (001) silicon (Si) substrate by direct …
High performance 1.3 μm aluminum-free quantum dot lasers grown by MOCVD
High Performance 1.3 μm Aluminum-Free Quantum Dot Lasers Grown by MOCVD Page 1
T4H.2.pdf OFC 2020 © OSA 2020 High Performance 1.3 μm Aluminum-Free Quantum Dot …
T4H.2.pdf OFC 2020 © OSA 2020 High Performance 1.3 μm Aluminum-Free Quantum Dot …
表面形貌对GaAs 生长速率测量的影响.
江玉琪， 张丹懿， 王一， 丁召… - Journal of Atomic & …, 2023 - search.ebscohost.com
本文利用Reflection High Energy Electron Diffraction (RHEED) 强度振荡测量GaAs
同质外延生长, 发现其生长速率随生长厚度按一定指数函数关系衰减. 这种衰减与GaAs …
同质外延生长, 发现其生长速率随生长厚度按一定指数函数关系衰减. 这种衰减与GaAs …
Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy
Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy Page 1
Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy Bowen …
Highly reliable and high speed InGaAs PIN photodetector on Si by heteroepitaxy Bowen …
InGaAs Photodiode Array on Silicon by Heteroepitaxy
Conference title, upper and lower case, bolded, 18 point type, centered Page 1 InGaAs
Photodiode Array on Silicon by Heteroepitaxy Bowen Song1*, Bei Shi1, Simone Šuran …
Photodiode Array on Silicon by Heteroepitaxy Bowen Song1*, Bei Shi1, Simone Šuran …
Growth of Group IV and III-V Semiconductor Materials for Silicon Photonics: Buffer Layer and Light Source Development
H Jia - 2023 - discovery.ucl.ac.uk
High data transmission speeds, high levels of integration, and low manufacturing costs have
established Si photonics as a crucial technology for next-generation data interconnects and …
established Si photonics as a crucial technology for next-generation data interconnects and …
Reliable quantum dot laser grown by MOCVD
Reliable Quantum Dot Laser Grown by MOCVD Page 1 Reliable Quantum Dot Laser Grown by
MOCVD Lei Wang, Eamonn Hughes, Chongxin Zhang, John Bowers, and Jonathan Klamkin …
MOCVD Lei Wang, Eamonn Hughes, Chongxin Zhang, John Bowers, and Jonathan Klamkin …
Lasers on silicon by heteroepitaxy
Lasers on Silicon by Heteroepitaxy Page 1 Lasers on Silicon by Heteroepitaxy Jonathan Klamkin
Electrical and Computer Engineering Department University of California Santa Barbara, CA …
Electrical and Computer Engineering Department University of California Santa Barbara, CA …