Photoluminescence of AlxGa1−xAs alloys
L Pavesi, M Guzzi - Journal of Applied Physics, 1994 - pubs.aip.org
A thorough discussion of the various features of the photoluminescence spectra of undoped,
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …
Absorption near the fundamental edge
EJ Johnson - Semiconductors and semimetals, 1967 - Elsevier
Publisher Summary The most direct way of observing the fundamental edge is by
determining the absorption from transmission measurements and this is generally the …
determining the absorption from transmission measurements and this is generally the …
Light-emitting diodes
AA Bergh, PJ Dean - Proceedings of the IEEE, 1972 - ieeexplore.ieee.org
Light-emitting diodes (LEDs) are devices designed to efficiently convert electrical energy
into electromagnetic radiation, most of which is visible to the human eye. Some of the …
into electromagnetic radiation, most of which is visible to the human eye. Some of the …
Bound-exciton, free-exciton, band-acceptor, donor-acceptor, and auger recombination in GaAs
EH Bogardus, HB Bebb - Physical Review, 1968 - APS
The broad-band photoluminescence spectra typical of bulk-grown or low-purity epitaxial
GaAs breaks into a number of sharp emission lines in very-high-purity GaAs. At low …
GaAs breaks into a number of sharp emission lines in very-high-purity GaAs. At low …
[图书][B] Physics of quantum well devices
BR Nag - 2001 - books.google.com
Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …
decades. Some of the devices have matured into commercially useful products and form part …
Photoluminescence I: theory
HB Bebb, EW Williams - Semiconductors and semimetals, 1972 - Elsevier
Publisher Summary This chapter discusses the theory of photoluminescence. The
semiclassical formalism is retained but modified to include spontaneous emission in a …
semiclassical formalism is retained but modified to include spontaneous emission in a …
Radiative recombination in highly excited CdS
CB a la Guillaume, JM Debever, F Salvan - Physical Review, 1969 - APS
The processes involved in the laser effect in CdS excited by electron bombardment have
been studied with the aid of an experimental technique allowing the spectral dependence of …
been studied with the aid of an experimental technique allowing the spectral dependence of …
Assessing the defect tolerance of kesterite-inspired solar absorbers
Various thin-film I2–II–IV–VI4 photovoltaic absorbers derived from kesterite Cu2ZnSn (S, Se)
4 have been synthesized, characterized, and theoretically investigated in the past few years …
4 have been synthesized, characterized, and theoretically investigated in the past few years …
Optical properties of polytypes of SiC: interband absorption, and luminescence of nitrogen-exciton complexes
WJ Choyke - Silicon Carbide–1968, 1969 - Elsevier
ABSTRACT A summary is given of the optical absorption in seven polytypes of SiC. Nitrogen-
exciton four-and three-particle spectra for a number of polytypes are discussed. Combining …
exciton four-and three-particle spectra for a number of polytypes are discussed. Combining …
Photoluminescence II: gallium arsenide
EW Williams, HB Bebb - Semiconductors and Semimetals, 1972 - Elsevier
Publisher Summary This chapter reviews the photoluminiscence properties of GaAs. Helium–
neon laser is used for photoluminescence measurements on GaAs. In addition …
neon laser is used for photoluminescence measurements on GaAs. In addition …