Photoluminescence of AlxGa1−xAs alloys

L Pavesi, M Guzzi - Journal of Applied Physics, 1994 - pubs.aip.org
A thorough discussion of the various features of the photoluminescence spectra of undoped,
p‐doped and n‐doped Al x Ga1− x As (0≤ x≤ 1) alloys is given. This review covers spectral …

Absorption near the fundamental edge

EJ Johnson - Semiconductors and semimetals, 1967 - Elsevier
Publisher Summary The most direct way of observing the fundamental edge is by
determining the absorption from transmission measurements and this is generally the …

Light-emitting diodes

AA Bergh, PJ Dean - Proceedings of the IEEE, 1972 - ieeexplore.ieee.org
Light-emitting diodes (LEDs) are devices designed to efficiently convert electrical energy
into electromagnetic radiation, most of which is visible to the human eye. Some of the …

Bound-exciton, free-exciton, band-acceptor, donor-acceptor, and auger recombination in GaAs

EH Bogardus, HB Bebb - Physical Review, 1968 - APS
The broad-band photoluminescence spectra typical of bulk-grown or low-purity epitaxial
GaAs breaks into a number of sharp emission lines in very-high-purity GaAs. At low …

[图书][B] Physics of quantum well devices

BR Nag - 2001 - books.google.com
Quantum well devices have been the objects of intensive research during the last two
decades. Some of the devices have matured into commercially useful products and form part …

Photoluminescence I: theory

HB Bebb, EW Williams - Semiconductors and semimetals, 1972 - Elsevier
Publisher Summary This chapter discusses the theory of photoluminescence. The
semiclassical formalism is retained but modified to include spontaneous emission in a …

Radiative recombination in highly excited CdS

CB a la Guillaume, JM Debever, F Salvan - Physical Review, 1969 - APS
The processes involved in the laser effect in CdS excited by electron bombardment have
been studied with the aid of an experimental technique allowing the spectral dependence of …

Assessing the defect tolerance of kesterite-inspired solar absorbers

A Crovetto, S Kim, M Fischer, N Stenger… - Energy & …, 2020 - pubs.rsc.org
Various thin-film I2–II–IV–VI4 photovoltaic absorbers derived from kesterite Cu2ZnSn (S, Se)
4 have been synthesized, characterized, and theoretically investigated in the past few years …

Optical properties of polytypes of SiC: interband absorption, and luminescence of nitrogen-exciton complexes

WJ Choyke - Silicon Carbide–1968, 1969 - Elsevier
ABSTRACT A summary is given of the optical absorption in seven polytypes of SiC. Nitrogen-
exciton four-and three-particle spectra for a number of polytypes are discussed. Combining …

Photoluminescence II: gallium arsenide

EW Williams, HB Bebb - Semiconductors and Semimetals, 1972 - Elsevier
Publisher Summary This chapter reviews the photoluminiscence properties of GaAs. Helium–
neon laser is used for photoluminescence measurements on GaAs. In addition …