Low‐energy X‐ray detectors are widely used in diverse areas, including medical diagnosis,
space exploration, environmental monitoring, industrial inspection, and scientific research …

Layer-by-layer morphology is a crucial signature of the quality of epitaxial thin films. In this
study, layer-by-layer growth of an ε-phase gallium oxide (ε-Ga 2 O 3) thin film is …

We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-
assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing …

Approximately 4-μm-thick GaN epitaxial films were directly grown onto a GaN/sapphire
template, sapphire, Si (111), and Si (100) substrates by high-temperature pulsed laser …

In this work, crack-free 3.3-μm-thick AlN films with high crystalline quality and atomic smooth
surfaces were achieved on sapphire substrates at a high growth rate of 2.9 μm/h. Double …

Abstract Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a
(111) Si substrate was investigated by photoluminescence (PL) and transmission electron …

We report on the growth of AlN epilayers at reasonably low temperatures of 1050–1110 C
on non-miscut c-plane sapphire by metal organic chemical vapor deposition (MOCVD). A …

The influence of structural defects in the active layer of GaN-on-Si substrates on the vertical
leakage current was studied. The structural defects were analyzed by analytical scanning …