Colloidal Synthesis of (PbBr2)2(AMTP)2PbBr4 a Periodic Perovskite “Heterostructured” Nanocrystal

EH Massasa, LTJ Kortstee, R Lifer, S Shaek… - Crystal Growth & …, 2024 - ACS Publications
Heterostructures in nanoparticles challenge our common understanding of interfaces due to
quantum confinement and size effects, giving rise to synergistic properties. An alternating …

Impact of blue-shifted effective joint density of electronic states on the photoluminescence of nanostructured silicon

S Basu, U Ghanta, SR Chowdhury, M Pramanik… - Journal of …, 2024 - Elsevier
Light emission from nanostructured silicon has triggered tremendous research interest for
three decades. Yet, the exact mechanism of photoluminescence from silicon-based nano …

Negative differential resistance in Si nanostructure: role of interface traps

S Chakrabarty, SM Hossain - Physica Scripta, 2023 - iopscience.iop.org
Negative differential resistance (NDR) has been observed in IV characteristics measured
between two aluminum (Al) pads deposited on a layer containing Silicon nanostructures …

Hot-carrier radiative recombination through phonon confinement in silicon nanocrystals embedded in colloidal xerogel matrix

S Biswas, A Nandi, U Ghanta, B Jana… - Journal of Applied …, 2021 - pubs.aip.org
Colloidal suspension of free standing silicon/silicon oxide core/shell nanoparticles has been
synthesized using a mechanochemical top-down approach. Quasi-mono-dispersed core …

Optically enhanced trap assisted hysteretic IV characteristics of nanocrystalline silicon based pin heterostructure

S Chakrabarty, G Das, M Ray… - Journal of Applied Physics, 2020 - pubs.aip.org
A pin heterostructure containing electrochemically synthesized silicon (Si) nanorods
embedded in a nonstoichiometric silicon oxide matrix sandwiched as i-layer between p-Si …

Trap-assisted switching in silicon nanocrystal based pin device

S Chakrabarty, S Mandal, S Biswas… - … on Device and …, 2018 - ieeexplore.ieee.org
An all Si, pin device, consisting of a nanostructured porous Si layer sandwiched between a p-
type crystalline Si and an n-type amorphous Si, exhibits current controlled switching …

Temperature-dependent photoluminescence from nanostructured silicon: role of quantum confined band states and interfacial defects

S Basu, U Ghanta, S Khan, M Pramanik, T Rajalingam… - 2024 - researchsquare.com
There are long-standing conflicting reports concerning the origin of strong visible
photoluminescence (PL) observed in surface-oxidized nanostructured silicon. Though …

Mechanochemical synthesis of quasi monodispersed core-shell silicon nanostructure

S Biswas, A Nandi, S Mukhopadhyay… - Applied Surface …, 2019 - Elsevier
Large quantities of free standing quasi mono-disperse silicon nanocrystal/silicon oxide core-
shell structured particles have been segregated by a cyclic process of sonication and …

[PDF][PDF] Study the Structural Properties of Porous Silicon and their Applications as Thermal Sensors

IA Abbas, AJ Kadhm - Baghdad Science Journal, 2024 - iasj.net
The photo-electrochemical etching (PECE) method has been utilized to create pSi samples
on n-type silicon wafers (Si). Using the etching time 12 and 22 min while maintaining the …

Ultrafast Carrier Relaxation Dynamics in Quantum Confined Non-Isotropic Silicon Nanostructures Synthesized by an Inductively Coupled Plasma Process

S Ponzoni, S Freddi, M Agati, V Le Borgne, S Boninelli… - Materials, 2020 - mdpi.com
To exploit the optoelectronic properties of silicon nanostructures (SiNS) in real devices, it is
fundamental to study the ultrafast processes involving the photogenerated charges …