Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
This paper reviews materials challenges and recent progress for selective area regrowth
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
and doping for vertical gallium nitride (GaN) power devices. The purpose is to realize …
Selective area doping of GaN toward high-power applications
Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …
the realization of advanced device structures for high-power applications, including, but not …
Vertical GaN power devices: Device principles and fabrication technologies—Part II
Vertical gallium nitride (GaN) power devices are enabling next-generation power electronic
devices and systems with higher energy efficiency, higher power density, faster switching …
devices and systems with higher energy efficiency, higher power density, faster switching …
Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN pn junctions for efficient power devices
We report correlated nanoscale mapping of the structure, composition, and properties of
regrown GaN pn junctions to identify how etching and non-planar regrowth processes limit …
regrown GaN pn junctions to identify how etching and non-planar regrowth processes limit …
AlN/GaN HEMTs with fmax Exceeding 300 GHz by Using Ge-Doped n++GaN Ohmic Contacts
L Yang, W Huang, D Wang, B Zhang… - ACS Applied …, 2023 - ACS Publications
Here, we report a high-performance AlN/GaN high electron mobility transistor (HEMT) by
using a heavily Ge-doped regrown GaN source and drain. We demonstrated that the …
using a heavily Ge-doped regrown GaN source and drain. We demonstrated that the …
[HTML][HTML] Isotropic atomic layer etching of GaN using SF6 plasma and Al (CH3) 3
NJ Chittock, Y Shu, SD Elliott, H Knoops… - Journal of Applied …, 2023 - pubs.aip.org
GaN is an enabling material for light emitting diodes, advanced radio frequency, and power
semiconductor devices. However, fabrication of GaN devices often relies on harsh etch …
semiconductor devices. However, fabrication of GaN devices often relies on harsh etch …
Selective area regrowth produces nonuniform Mg doping profiles in nonplanar GaN p–n junctions
Nonplanar GaN p–n junctions formed by selective area regrowth were analyzed using
pulsed laser atom probe tomography. Dilute Al marker layers were used to map the …
pulsed laser atom probe tomography. Dilute Al marker layers were used to map the …
Etched-and-regrown GaN P–N diodes with low-defect interfaces prepared by in situ TBCl etching
The ability to form pristine interfaces after etching and regrowth of GaN is a prerequisite for
epitaxial selective area doping, which in turn is needed for the formation of lateral PN …
epitaxial selective area doping, which in turn is needed for the formation of lateral PN …
Strain mapping of GaN substrates and epitaxial layers used for power electronic devices by synchrotron X-ray rocking curve topography
Strain and tilt maps of gallium nitride (GaN) materials including substrates, ion-implanted
and annealed epilayers, and etched and regrown epilayers by different etching methods …
and annealed epilayers, and etched and regrown epilayers by different etching methods …
A study of damage-free in-situ etching of GaN in metalorganic chemical vapor deposition (MOCVD) by tertiarybutylchloride (TBCl)
This paper reports a study of the effect of NH 3 flow rate and reactor temperature on the
tertiarybutylchloride (TBCl) etching of patterned GaN-on-sapphire templates. It is found that …
tertiarybutylchloride (TBCl) etching of patterned GaN-on-sapphire templates. It is found that …