Design of E-and W-band low-noise amplifiers in 22-nm CMOS FD-SOI
This article presents E-and W-band low-noise amplifiers (LNA) in GlobalFoundries 22-nm
CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage …
CMOS fully depleted silicon-on-insulator (FD-SOI). Both amplifiers employ a three-stage …
Design and analysis of a 60-GHz CMOS Doppler micro-radar system-in-package for vital-sign and vibration detection
TYJ Kao, Y Yan, TM Shen… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
This paper presents the first flip-chip-packaged and fully integrated Doppler micro-radar in
90-nm CMOS for noncontact vital-sign and vibration detection. The use of a smaller …
90-nm CMOS for noncontact vital-sign and vibration detection. The use of a smaller …
A mm-wave power-harvesting RFID tag in 90 nm CMOS
S Pellerano, J Alvarado… - IEEE Journal of Solid …, 2010 - ieeexplore.ieee.org
A mm-wave power-harvesting RFID tag is implemented in 90 nm CMOS. Operation at mm-
wave reduces antenna size and could allow antenna integration on-chip. This, together with …
wave reduces antenna size and could allow antenna integration on-chip. This, together with …
A new frontier in ultralow power wireless links: Network-on-chip and chip-to-chip interconnects
This paper explores the general framework and prospects for on-chip and off-chip wireless
interconnects implemented for high-performance computing (HPC) systems in the context of …
interconnects implemented for high-performance computing (HPC) systems in the context of …
A W-band CMOS receiver chipset for millimeter-wave radiometer systems
This paper presents a W-band receiver chipset for passive millimeter-wave imaging in a 65
nm standard CMOS technology. The system comprises a direct-conversion receiver front …
nm standard CMOS technology. The system comprises a direct-conversion receiver front …
A compact 75 GHz LNA with 20 dB gain and 4 dB noise figure in 22nm FinFET CMOS technology
W Shin, S Callender, S Pellerano… - 2018 IEEE Radio …, 2018 - ieeexplore.ieee.org
This paper presents E-band (71-76 GHz) LNA design in 22nm CMOS FinFET technology.
Stacked topology with DC current re-use for 2-stage cascaded LNA results in power efficient …
Stacked topology with DC current re-use for 2-stage cascaded LNA results in power efficient …
Design and analysis of CMOS LNAs with transformer feedback for wideband input matching and noise cancellation
This paper presents a new transformer-feedback technique for RF and millimeter-wave
(mmW) low-noise amplifiers (LNAs). The working principle of conventional LNAs using …
(mmW) low-noise amplifiers (LNAs). The working principle of conventional LNAs using …
A 150 GHz Amplifier With 8 dB Gain and 6 dBm in Digital 65 nm CMOS Using Dummy-Prefilled Microstrip Lines
A 150 GHz amplifier in digital 65 nm CMOS process is presented. Matching loss is reduced
and bandwidth extended by simplistic topology: no dc-block capacitor, shunt-only tuning and …
and bandwidth extended by simplistic topology: no dc-block capacitor, shunt-only tuning and …
A programmable frequency multiplier-by-29 architecture for millimeter wave applications
C Jany, A Siligaris… - IEEE Journal of Solid …, 2015 - ieeexplore.ieee.org
This paper presents an original mmW frequency multiplier that provides the channel center
frequencies of the IEEE 802.15. 3c standard from a much lower and fixed frequency of 2.16 …
frequencies of the IEEE 802.15. 3c standard from a much lower and fixed frequency of 2.16 …
A 4-element 60-GHz CMOS phased-array receiver with beamforming calibration
A 4-element 60-GHz phased-array receiver RF front-end (RFE) employing LO-path phase-
shifting configuration is presented. A wide bandwidth from 57 to 66 GHz is achieved by …
shifting configuration is presented. A wide bandwidth from 57 to 66 GHz is achieved by …