Ga2O3 has gained intensive attention for the continuing myth of the electronics as a new-
generation wide bandgap semiconductor, owing to its natural physical and chemical …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …

The ultrawide bandgap (UWBG)(~ 4.8 eV) and melt-grown substrate availability of β-Ga 2 O
3 give promise to the development of next-generation power electronic devices with …

This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …

Beta-phase gallium oxide (β-Ga 2 O 3), the most thermally stable phase of Ga 2 O 3, has
stimulated great interest in power electronics due to its ultra-wide bandgap (∼ 4.9 eV) and …

We report polycrystalline diamond epitaxial growth on β-Ga 2 O 3 for device-level thermal
management. We focused on establishing diamond growth conditions on β-Ga 2 O 3 …

The low thermal conductivity of Ga 2 O 3 has arguably been the most serious concern for Ga
2 O 3 power and RF devices. Despite many simulation studies, there is no experimental …

Heteroepitaxy of β-phase gallium oxide (β-Ga2O3) thin films on foreign substrates shows
promise for the development of next-generation deep ultraviolet solar blind photodetectors …