Controllable Organic Resistive Switching Achieved by One‐Step Integration of Cone‐Shaped Contact
Conductive filaments (CFs)‐based resistive random access memory possesses the ability of
scaling down to sub‐nanoscale with high‐density integration architecture, making it the most …
scaling down to sub‐nanoscale with high‐density integration architecture, making it the most …
[PDF][PDF] Unravelling the nature of unipolar resistance switching in organic devices by utilizing the photovoltaic effect
S Nau, S Sax, EJW List‐Kratochvil - Advanced Materials, 2014 - researchgate.net
Over the past decade, resistive memory [1] has appeared as one of the pace setters in the
field of emerging non-volatile random access memory technologies and serious …
field of emerging non-volatile random access memory technologies and serious …
Air-stable, non-volatile resistive memory based on hybrid organic/inorganic nanocomposites
A non-volatile memory element based on organic/inorganic nanocomposites is presented.
The device can be operated in ambient conditions, showing high retention time and long …
The device can be operated in ambient conditions, showing high retention time and long …
Direct observation of conductive filament formation in Alq3 based organic resistive memories
This work explores resistive switching mechanisms in non-volatile organic memory devices
based on tris (8-hydroxyquinolie) aluminum (Alq 3). Advanced characterization tools are …
based on tris (8-hydroxyquinolie) aluminum (Alq 3). Advanced characterization tools are …
Nanorods versus nanoparticles: a comparison study of Au/ZnO-PMMA/Au non-volatile memory devices showing the importance of nanostructure geometry on …
Hybrid organic-inorganic devices offer a simple and low cost route to the fabrication of
resistive memory devices. However the switching and conduction mechanisms are not well …
resistive memory devices. However the switching and conduction mechanisms are not well …
3D imaging of filaments in organic resistive memory devices
Y Busby, N Crespo-Monteiro, M Girleanu… - Organic …, 2015 - Elsevier
Filaments in organic and hybrid resistive memories are studied by combining advanced
characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked …
characterization techniques. Model ITO/polymer/Ag devices based on a cross-linked …
An organic multilevel non-volatile memory device based on multiple independent switching modes
The demand for higher data density memory structures is greater today than ever before.
Multilevel resistive organic memory devices (OMD) provide an ideal solution, in being easily …
Multilevel resistive organic memory devices (OMD) provide an ideal solution, in being easily …
[PDF][PDF] 柔性大面积印刷电子新器件及其物联网应用
郑立荣， 仇志军， 游胤涛， 刘志英， 杨赓， 谢丽… - 中国材料 …, 2014 - nanomem.fudan.edu.cn
作为一项新兴技术, 物联网通过各种传感器和智能标准通信接口, 使得物理世界的“物”
与信息网络的“云” 无缝链接, 从而实现对物品对象的标识和智能管理. 由于柔性电子特有的弯曲 …
与信息网络的“云” 无缝链接, 从而实现对物品对象的标识和智能管理. 由于柔性电子特有的弯曲 …
TOP-electrode-eliminated organic bi-stable devices and their two switching modes in different atmospheres
An OBD device fabrication method without top electrode deposition is presented to
investigate organic bi-stable mechanisms, showing that the bi-stable phenomenon can …
investigate organic bi-stable mechanisms, showing that the bi-stable phenomenon can …
Modeling the underlying mechanisms for organic memory devices: tunneling, electron emission, and oxygen adsorbing
Y Yao, Y You, W Si, CQ Wu - Applied Physics Letters, 2012 - pubs.aip.org
We present a combined experimental and theoretical study to uncover the underlying
mechanisms of organic memory devices. The theoretical model we propose is a metallic …
mechanisms of organic memory devices. The theoretical model we propose is a metallic …