Short-wavelength infrared light with a wavelength range of 1–3 µm is crucial in various fields
related to human activities. It has a better penetrating ability than visible light in harsh …

Polarization‐sensitive detectors based on anisotropic low‐dimensional materials have been
widely investigated in recent years. Some low‐dimensional materials possess anisotropy …

Polarization-sensitive photodetectors, with the ability of identifying the texture-, stress-, and
roughness-induced light polarization state variation, displace unique advantages in the …

This work presents a study on the optical applications of chemical vapor deposition‐grown
Sb2Se3 nanowires in polarized single nanowire photodetectors. High‐quality Sb2Se3 …

Sb2Se3 has great potential for applications in near‐infrared sensors because of its narrow
bandgap, environmental friendliness, and high absorption coefficient. However, the low …

Compared with three-dimensional semiconductors, low-dimensional (LD) semiconductors
have unique atomic arrangements and excellent optical and electrical characteristics, such …

In this work, we study the chemical vapor deposition growth of Sb 2 Se 3 nanotubes and
investigate their novel applications in polarization-sensitive near-infrared photodetectors …

Quasi‐1D ternary semiconductors have attracted considerable attention recently because of
their additional bandgap engineering deriving from the variable stoichiometry. Herein …

The study is based on annealing-induced Bi diffusion into Se 30 S 30 Sb 40 sites that bring
modification in its linear-nonlinear optical, structural, and dielectric properties. The Bi/Se 30 …

For low-dimensional materials, the in-plane anisotropy of their structure can realize the
detection of polarized light. This characteristic can be utilized to fabricate polarization …