A review on emerging negative capacitance field effect transistor for low power electronics
Power consumption is the major concern for conventional CMOS based integrated circuit
and systems. Since there is a scope of lowering supply voltage with steep-subthreshold …
and systems. Since there is a scope of lowering supply voltage with steep-subthreshold …
Tunneling transistors based on graphene and 2-D crystals
D Jena - Proceedings of the IEEE, 2013 - ieeexplore.ieee.org
As conventional transistors become smaller and thinner in the quest for higher performance,
a number of hurdles are encountered. The discovery of electronic-grade 2-D crystals has …
a number of hurdles are encountered. The discovery of electronic-grade 2-D crystals has …
Doping-less tunnel field effect transistor: Design and investigation
MJ Kumar, S Janardhanan - IEEE transactions on Electron …, 2013 - ieeexplore.ieee.org
Using calibrated simulations, we report a detailed study of the doping-less tunnel field effect
transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the …
transistor (TFET) on a thin intrinsic silicon film using charge plasma concept. Without the …
Harvesting renewable energy from Earth's mid-infrared emissions
SJ Byrnes, R Blanchard… - Proceedings of the …, 2014 - National Acad Sciences
It is possible to harvest energy from Earth's thermal infrared emission into outer space. We
calculate the thermodynamic limit for the amount of power available, and as a case study …
calculate the thermodynamic limit for the amount of power available, and as a case study …
Electrostatic doping in semiconductor devices
G Gupta, B Rajasekharan… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
To overcome the limitations of chemical doping in nanometer-scale semiconductor devices,
electrostatic doping (ED) is emerging as a broadly investigated alternative to provide …
electrostatic doping (ED) is emerging as a broadly investigated alternative to provide …
Design of U-shape channel tunnel FETs with SiGe source regions
W Wang, PF Wang, CM Zhang, X Lin… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
In this brief, a novel U-shape-channel tunneling field-effect transistor (UTFET) with a SiGe
source region is investigated by 2-D technology computer aided design simulation. The …
source region is investigated by 2-D technology computer aided design simulation. The …
A review of sharp-switching devices for ultra-low power applications
S Cristoloveanu, J Wan… - IEEE Journal of the …, 2016 - ieeexplore.ieee.org
The reduction of the supply voltage is standard MOSFETs is impeded by the subthreshold
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
slope, which cannot be lowered below 60 mV/decade, even in ideal fully-depleted devices …
A novel PNPN-like Z-shaped tunnel field-effect transistor with improved ambipolar behavior and RF performance
RM Imenabadi, M Saremi… - IEEE transactions on …, 2017 - ieeexplore.ieee.org
To suppress the ambipolar behavior and improve RF performance in tunnel field-effect
transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more …
transistors (TFETs), a Z-shaped (ZS)-TFET is proposed. The proposed ZS-TFET is more …
A 2-D analytical model for double-gate tunnel FETs
M Gholizadeh, SE Hosseini - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
This paper presents a 2-D analytic potential model for double-gate (DG) tunnel field effect
transistors (TFETs) by solving the 2-D Poisson's equation. From the potential profile, the …
transistors (TFETs) by solving the 2-D Poisson's equation. From the potential profile, the …
Energy-efficient transistors: suppressing the subthreshold swing below the physical limit
With the miniaturization of silicon-based electronic components, power consumption is
becoming a fundamental issue for micro–nano electronic circuits. The main reason for this is …
becoming a fundamental issue for micro–nano electronic circuits. The main reason for this is …