Normally-off GaN-on-Si MISFET using PECVD SiON gate dielectric
We have developed a silicon oxynitride (SiON) deposition process using a plasma-
enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal …
enhanced chemical vapor deposition system for the gate dielectric of GaN-on-Si metal …
High quality PECVD SiO2 process for recessed MOS-gate of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistors
A high quality SiO 2 deposition process using a plasma enhanced chemical vapor
deposition system has been developed for the gate insulator process of normally-off …
deposition system has been developed for the gate insulator process of normally-off …
AlGaN/GaN Schottky-gate HEMTs With UV/O₃-treated gate interface
The surface condition under gate of AlGaN/GaN heterostructure plays a critical role in high-
electron mobility transistor (HEMT). In this study, the effects of ultraviolet/ozone (UV/O 3) …
electron mobility transistor (HEMT). In this study, the effects of ultraviolet/ozone (UV/O 3) …
12.5 kV GaN super-heterojunction Schottky barrier diodes
This article reports GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs) with
substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed …
substantially improved performance. Metal-2DEG sidewall n-ohmic contacts were deployed …
GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV Dynamic Switching
JT Kemmerling, R Guan, M Sadek… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This article reports on two generations of GaN-on-sapphire super-heterojunction (SHJ)
transistors, aiming at the realization of 10-kV class power transistors with low static and …
transistors, aiming at the realization of 10-kV class power transistors with low static and …
Temperature-dependent electrical characterization of high-voltage AlGaN/GaN-on-Si HEMTs with Schottky and ohmic drain contacts
A Taube, J Kaczmarski, R Kruszka, J Grochowski… - Solid-State …, 2015 - Elsevier
In this work we present results of electrical parameters characterization of high-voltage
AlGaN/GaN high electron mobility transistors with ohmic and Schottky drain electrodes on …
AlGaN/GaN high electron mobility transistors with ohmic and Schottky drain electrodes on …
Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer
We have developed a low-temperature ohmic contact process with a recessed overhang
configuration for Au-free (complementary metal-oxide semiconductor) CMOS-compatible …
configuration for Au-free (complementary metal-oxide semiconductor) CMOS-compatible …
Fermi-level unpinning using a Ge-passivated metal–interlayer–semiconductor structure for non-alloyed ohmic contact of high-electron-mobility transistors
We demonstrate the use of germanium passivation in conjunction with a ZnO interlayer in a
metal-interlayer-semiconductor structure in a source/drain (S/D) contact. The Fermi-level …
metal-interlayer-semiconductor structure in a source/drain (S/D) contact. The Fermi-level …
Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment
We demonstrate the effect of SF 6 plasma passivation with a ZnO interlayer in a metal-
interlayer-semiconductor (MIS) structure to reduce source/drain (S/D) contact resistance …
interlayer-semiconductor (MIS) structure to reduce source/drain (S/D) contact resistance …
Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE
SW Han, Y Noh, MG Jo, SH Kim, JE Oh… - IEEE Electron …, 2016 - ieeexplore.ieee.org
Due to the difficulty of GaN epitaxy growth on Si (001) substrate, GaN-on-Si wafers are
generally grown on Si (111) substrates. Because of the poor electrical characteristics of Si …
generally grown on Si (111) substrates. Because of the poor electrical characteristics of Si …