Improved uniformity of atomic-layer-deposited HfO2 film along the length of glass monocapillary with high length-diameter ratio
Y Li, H Wu, W Lv, X Kong, L Han, H Zhang - Optical Materials, 2024 - Elsevier
It has been a difficult to deposit a uniform film on the inner surface of monocapillary due to
the high length-diameter ratio. Atomic layer deposition (ALD) shows great potential to coat …
the high length-diameter ratio. Atomic layer deposition (ALD) shows great potential to coat …
Band alignment of TiO2/SiC and TiO2/Si heterojunction interface grown by atomic layer deposition
YX Zeng, XR Wang, J Zhang, W Huang… - Semiconductor …, 2023 - iopscience.iop.org
Silicon carbide (SiC) is regarded as a promising semiconductor owing to its wide band gap
and high thermal conductivity. Meanwhile, it possesses issues such as interface properties …
and high thermal conductivity. Meanwhile, it possesses issues such as interface properties …
Enhanced electrical properties of 4H-SiC/Al2O3 heterojunction by PEALD in situ NH3-plasma passivation
L Zheng, J Huang, F Huang, Z Liu, X Cheng, Y Yu - Applied Physics A, 2022 - Springer
The carbon clusters and oxygen vacancies-induced interface traps and near-interface-oxide
traps (NIOTs) at the dielectric oxide/SiC heterojunction severely degenerate the electrical …
traps (NIOTs) at the dielectric oxide/SiC heterojunction severely degenerate the electrical …