Phase‐change random access memory (PCRAM) is one of the most technologically mature
candidates for next‐generation non‐volatile memory and is currently at the forefront of …

Phase-change memory (PCM) is a promising candidate for data storage in flexible
electronics, but its high switching current and power are often drawbacks. In this study, we …

Data-centric applications are pushing the limits of energy-efficiency in today's computing
systems, including those based on phase-change memory (PCM). This technology must …

Superlattice (SL) phase change materials have shown promise to reduce the switching
current and resistance drift of phase change memory (PCM). However, the effects of internal …

Alloys of sulfur, selenium and tellurium, often referred to as chalcogenide semiconductors,
offer a highly versatile, compositionally-controllable material platform for a variety of passive …

Atomic layer deposition (ALD) of Sb2Te3/GeTe superlattice (SL) film on planar and vertical
sidewall areas containing TiN metal and SiO2 insulator is demonstrated. The peculiar …

Phase‐change memory (PCM) is a promising candidate for neuro‐inspired, data‐intensive
artificial intelligence applications, which relies on the physical attributes of PCM materials …

Multilevel storage and resistance drift are two challenges in phase-change memories. Here,
we report that [C (5 nm)/Sb 2 Te 3 (12 nm)] 5 phase-change heterostructure film has …

Phase-change memory (PCM) technology has recently attracted a vivid interest for
neuromorphic applications, in-memory computing, and photonic integration due to the …

The van der Waals (vdW) superlattice, obtained by applying the concept of the periodic
superlattice to two-dimensional materials using low-energy vdW physical assembly, is …