Recommended methods to study resistive switching devices
Resistive switching (RS) is an interesting property shown by some materials systems that,
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
especially during the last decade, has gained a lot of interest for the fabrication of electronic …
Variability in resistive memories
Resistive memories are outstanding electron devices that have displayed a large potential in
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
a plethora of applications such as nonvolatile data storage, neuromorphic computing …
Nanoionic memristive phenomena in metal oxides: the valence change mechanism
This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …
valence change mechanism (VCM), which has become a major trend in electronic materials …
Filament growth and resistive switching in hafnium oxide memristive devices
We report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive
switching model for the device is proposed, taking into account important experimental and …
switching model for the device is proposed, taking into account important experimental and …
On the thermal models for resistive random access memory circuit simulation
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …
operation and exhibit a set of technological features that make them ideal candidates for …
Resistive switching in HfO2 based valence change memories, a comprehensive 3D kinetic Monte Carlo approach
S Aldana, P García-Fernández… - Journal of Physics D …, 2020 - iopscience.iop.org
A simulation study has been performed to analyze resistive switching (RS) phenomena in
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
valence change memories (VCM) based on a HfO 2 dielectric. The kernel of the simulation …
Memristor variability and stochastic physical properties modeling from a multivariate time series approach
FJ Alonso, D Maldonado, AM Aguilera… - Chaos, Solitons & …, 2021 - Elsevier
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle
variability in memristors. These devices show variability linked to the inherent stochasticity of …
variability in memristors. These devices show variability linked to the inherent stochasticity of …
In situ observation of low‐power nano‐synaptic response in graphene oxide using conductive atomic force microscopy
Multiple studies have reported the observation of electro‐synaptic response in different
metal/insulator/metal devices. However, most of them analyzed large (> 1 µm2) devices that …
metal/insulator/metal devices. However, most of them analyzed large (> 1 µm2) devices that …
Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
The relevance of the intrinsic series resistance effect in the context of resistive random
access memory (RRAM) compact modeling is investigated. This resistance notably affects …
access memory (RRAM) compact modeling is investigated. This resistance notably affects …
[HTML][HTML] Parameter extraction techniques for the analysis and modeling of resistive memories
A revision of the different numerical techniques employed to extract resistive switching (RS)
and modeling parameters is presented. The set and reset voltages, commonly used for …
and modeling parameters is presented. The set and reset voltages, commonly used for …