Exchange bias in nanostructures
The phenomenology of exchange bias and related effects in nanostructures is reviewed.
The types of systems discussed include: lithographically fabricated ferromagnetic (FM) …
The types of systems discussed include: lithographically fabricated ferromagnetic (FM) …
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
WJ Gallagher, SSP Parkin - IBM Journal of Research and …, 2006 - ieeexplore.ieee.org
This paper reviews the remarkable developments of the magnetic tunnel junction over the
last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and …
last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and …
Relaxing non-volatility for fast and energy-efficient STT-RAM caches
Spin-Transfer Torque RAM (STT-RAM) is an emerging non-volatile memory technology that
is a potential universal memory that could replace SRAM in processor caches. This paper …
is a potential universal memory that could replace SRAM in processor caches. This paper …
Spin-transfer torque memories: Devices, circuits, and systems
Spin-transfer torque magnetic memory (STT-MRAM) has gained significant research interest
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …
due to its nonvolatility and zero standby leakage, near unlimited endurance, excellent …
Magnetoresistive random access memory using magnetic tunnel junctions
S Tehrani, JM Slaughter, M Deherrera… - Proceedings of the …, 2003 - ieeexplore.ieee.org
Magnetoresistive random access memory (MRAM) technology combines a spintronic device
with standard silicon-based microelectronics to obtain a combination of attributes not found …
with standard silicon-based microelectronics to obtain a combination of attributes not found …
Magnetic domain-wall dynamics in a submicrometre ferromagnetic structure
D Atkinson, DA Allwood, G Xiong, MD Cooke… - Nature materials, 2003 - nature.com
As fabrication technology pushes the dimensions of ferromagnetic structures into the
nanoscale, understanding the magnetization processes of these structures is of fundamental …
nanoscale, understanding the magnetization processes of these structures is of fundamental …
Magnetization dynamics with a spin-transfer torque
The magnetization reversal and dynamics of a spin valve pillar, whose lateral size is 64× 64
nm 2, are studied by using micromagnetic simulation in the presence of spin-transfer torque …
nm 2, are studied by using micromagnetic simulation in the presence of spin-transfer torque …
2 Mb SPRAM (SPin-transfer torque RAM) with bit-by-bit bi-directional current write and parallelizing-direction current read
T Kawahara, R Takemura, K Miura… - IEEE Journal of Solid …, 2008 - ieeexplore.ieee.org
A 1.8 V 2 Mb SPin-transfer torque RAM (SPRAM) chip using a 0.2 mum logic process with
an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power …
an MgO tunneling barrier cell demonstrates the circuit technologies for potential low-power …
Magnetoelectric exchange bias systems in spintronics
X Chen, A Hochstrat, P Borisov, W Kleemann - Applied physics letters, 2006 - pubs.aip.org
Magnetoelectric switching of perpendicular exchange bias is observed in a Co∕ Pt
multilayer attached to single crystalline magnetoelectric antiferromagnetic Cr 2 O 3 (111) …
multilayer attached to single crystalline magnetoelectric antiferromagnetic Cr 2 O 3 (111) …
Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots
We report a multilayer solution-processed blue light-emitting diode based on colloidal
core/shell CdS/ZnS nanocrystal quantum dots (QDs). At a low-operating voltage of 5.5 V, the …
core/shell CdS/ZnS nanocrystal quantum dots (QDs). At a low-operating voltage of 5.5 V, the …