Electric-field-induced metal filament formation in cobalt-based CBRAM observed by TEM
Conductive-bridging random access memory (CBRAM) using a cobalt (Co) electrode has
recently featured a CMOS-compatible process, excellent data retention, and a sub-μA …
recently featured a CMOS-compatible process, excellent data retention, and a sub-μA …
Enhanced resistive switching characteristics of conductive bridging memory device by a Co–Cu alloy electrode
One of the main challenges in the development of conductive bridging random access
memory (CBRAM) is the large stochastic nature of ion movement that ultimately leads to …
memory (CBRAM) is the large stochastic nature of ion movement that ultimately leads to …
Effect of the Oxygen Composition Control of HfOx Films on Threshold and Memory Switching Characteristics for Hybrid Memory Applications
Considering a high‐density vertical X‐point memory array, the film thickness of an active
device for the selector and memory needs to be scaled down. Here, the authors propose an …
device for the selector and memory needs to be scaled down. Here, the authors propose an …
Zeolitic-imidazolate framework (ZIF-67) based bipolar memristor for nonvolatile ReRAM application
In the realm of next-generation nonvolatile memories, there is a strong demand for resistive
random access memory (ReRAM) devices that are affordable, stable, and simple to produce …
random access memory (ReRAM) devices that are affordable, stable, and simple to produce …
Switching layer optimization in Co-based CBRAM for> 105 memory window in sub-100 µA regime
Y Cho, BS Kang, P Kumbhare, R Delhougne… - Solid-State …, 2024 - Elsevier
Co/HfO 2-based CBRAM stacks are optimized to enlarge the memory window for low-current
(50 µA) operation. First, we dope the switching layer with Si to decrease the pristine current …
(50 µA) operation. First, we dope the switching layer with Si to decrease the pristine current …