Characterization of traps in the gate dielectric of amorphous and nanocrystalline silicon thin-film transistors by 1/f noise
EG Ioannidis, A Tsormpatzoglou, DH Tassis… - Journal of Applied …, 2010 - pubs.aip.org
The low frequency noise technique is used to obtain the volume profile of traps in the SiN x
gate dielectric of hydrogenated amorphous silicon (a-Si: H) and nanocrystalline silicon (nc …
gate dielectric of hydrogenated amorphous silicon (a-Si: H) and nanocrystalline silicon (nc …
Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric
The analysis of experimental data following the McWhorter model for the low frequency
noise in amorphous Si thin film transistors (TFTs) with SiN x gate dielectric revealed …
noise in amorphous Si thin film transistors (TFTs) with SiN x gate dielectric revealed …
[PDF][PDF] 氢化非晶硅薄膜晶体管的低频噪声特性
刘远， 何红宇， 陈荣盛， 李斌， 恩云飞， 陈义强 - 物理学报, 2017 - wulixb.iphy.ac.cn
针对氢化非晶硅薄膜晶体管(hydrogenated amorphous silicon thin film transistor, a-Si: H TFT)
的低频噪声特性展开实验研究. 由测量结果可知, a-Si: H TFT 的低频噪声特性遵循1/fγ (f 为频率 …
的低频噪声特性展开实验研究. 由测量结果可知, a-Si: H TFT 的低频噪声特性遵循1/fγ (f 为频率 …
Active‐layer thickness effects related with microstructure, electrical properties and flicker noise in polycrystalline ZnO thin film transistors
KS Jeong, YM Kim, JG Park, SD Yang… - AIP Conference …, 2011 - pubs.aip.org
We report the fabrication and characteristic analysis of ZnO thin film transistors (TFTs)
having two different active layer thicknesses such as 40nm and 80nm, using RF magnetron …
having two different active layer thicknesses such as 40nm and 80nm, using RF magnetron …
Thin film transistor modeling: Frequency dispersion
M Shur - 2017 - dc.engconfintl.org
Using new materials (including organic materials), scaling down to shorter device sizes,
using printed TFT technology, and operating Thin Film Transistors (TFTs) at higher …
using printed TFT technology, and operating Thin Film Transistors (TFTs) at higher …
LOW FREQUENCY NOISE AND INTERFACE DENSITY OF TRAPS IN InGaAs MOSFETs WITH GdScO3 HIGH-K DIELECTRIC
S Rumyantsev, W Stillman, M Shur, T Heeg… - … Journal of High …, 2011 - World Scientific
Insulated gate n-channel enhancement mode InGaAs field effect transistors with the GdScO
3 high-k dielectric have been fabricated and studied. The low frequency noise was high …
3 high-k dielectric have been fabricated and studied. The low frequency noise was high …
Hysteresis effect in bottom-gate polymorphous silicon thin-film transistors
The hysteresis effect observed in the transfer characteristics of n-channel bottom-gate
hydrogenated polymorphous silicon (pm-Si: H) thin-film transistors (TFTs) is investigated in …
hydrogenated polymorphous silicon (pm-Si: H) thin-film transistors (TFTs) is investigated in …
1/f noise near the free surface of a semiconductor
T Blachowicz - arXiv preprint arXiv:0803.4287, 2008 - arxiv.org
This paper describes the so-called 1/f noise generated within the depleted region below a
free semiconducting surface. It was shown that there is a link between the 1/f noise, which …
free semiconducting surface. It was shown that there is a link between the 1/f noise, which …