Nonthermal plasma synthesis of semiconductor nanocrystals
U Kortshagen - Journal of Physics D: Applied Physics, 2009 - iopscience.iop.org
Semiconductor nanocrystals have attracted considerable interest for a wide range of
applications including light-emitting devices and displays, photovoltaic cells, nanoelectronic …
applications including light-emitting devices and displays, photovoltaic cells, nanoelectronic …
Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics
PR i Cabarrocas - Current Opinion in Solid State and Materials Science, 2002 - Elsevier
In the past 2 years major advances have been made in the understanding of silane–
hydrogen plasmas. In particular, the control of the formation of clusters and even crystallites …
hydrogen plasmas. In particular, the control of the formation of clusters and even crystallites …
Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements
AF i Morral, PR i Cabarrocas, C Clerc - Physical Review B, 2004 - APS
The dielectric functions of amorphous and polymorphous silicon films prepared under
various plasma conditions have been deduced from UV-visible spectroscopic ellipsometry …
various plasma conditions have been deduced from UV-visible spectroscopic ellipsometry …
Plasma enhanced chemical vapor deposition of amorphous, polymorphous and microcrystalline silicon films
PR i Cabarrocas - Journal of non-crystalline solids, 2000 - Elsevier
The plasma processes and growth reactions involved in the deposition of amorphous,
polymorphous and microcrystalline silicon thin films are reviewed. The reference being a-Si …
polymorphous and microcrystalline silicon thin films are reviewed. The reference being a-Si …
Modelling of silicon hydride clustering in a low-pressure silane plasma
A new silicon hydride clustering model was developed to study the nucleation of particles in
a low-temperature silane plasma. The model contains neutral silanes, silylenes, silenes and …
a low-temperature silane plasma. The model contains neutral silanes, silylenes, silenes and …
Numerical investigation of particle formation mechanisms in silane discharges
K De Bleecker, A Bogaerts, R Gijbels… - Physical Review E …, 2004 - APS
The formation of particles in low-pressure silane discharges has been studied extensively
over the last decade. In this paper we try to identify, by numerical simulations, the precursors …
over the last decade. In this paper we try to identify, by numerical simulations, the precursors …
Atomic structure of the nanocrystalline Si particles appearing in nanostructured Si thin films produced in low-temperature radiofrequency plasmas
G Viera, M Mikikian, E Bertran… - Journal of Applied …, 2002 - pubs.aip.org
Nanostructured Si thin films, also referred as polymorphous, were grown by plasma-
enhanced chemical vapor deposition. The term “polymorphous” is used to define silicon …
enhanced chemical vapor deposition. The term “polymorphous” is used to define silicon …
Size dependent characteristics of plasma synthesized carbonaceous nanoparticles
Low temperature plasmas with their strong non equilibrium character offer unique
possibilities for the production of nanoparticles. This contribution deals with size dependent …
possibilities for the production of nanoparticles. This contribution deals with size dependent …
Growth and optoelectronic properties of polymorphous silicon thin films
PR i Cabarrocas, AF i Morral, Y Poissant - Thin Solid Films, 2002 - Elsevier
Polymorphous silicon is a nanostructured thin film consisting of a small fraction of
nanocrystalline silicon particles and/or clusters embedded in a relaxed amorphous matrix …
nanocrystalline silicon particles and/or clusters embedded in a relaxed amorphous matrix …
Nanocrystalline silicon films prepared from silane plasma in RF-PECVD, using helium dilution without hydrogen: structural and optical characterization
K Bhattacharya, D Das - Nanotechnology, 2007 - iopscience.iop.org
The effect of RF power on the nanocrystallization of a Si: H network has been studied by
PECVD at a substrate temperature of 200 C and a gas pressure of 0.5 Torr, using silane as …
PECVD at a substrate temperature of 200 C and a gas pressure of 0.5 Torr, using silane as …