Finfet transistor circuit
ST Becker, MC Smayling, D Gandhi, J Mali… - US Patent …, 2014 - Google Patents
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …
components formed in or on a common substrate including semiconductor components …
Semiconductor device with dynamic array sections defined and placed according to manufacturing assurance halos
ST Becker, MC Smayling - US Patent 8,759,882, 2014 - Google Patents
H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …
components formed in or on a common substrate including semiconductor components …
Circuits with linear finfet structures
ST Becker, MC Smayling, D Gandhi, J Mali… - US Patent …, 2015 - Google Patents
2013-02-22 Assigned to TELA INNOVATIONS, INC. reassignment TELA INNOVATIONS,
INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS) …
INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS) …
Cross-coupled transistor circuit defined having diffusion regions of common node on opposing sides of same gate electrode track with at least two non-inner …
ST Becker, J Mali, C Lambert - US Patent 8,847,329, 2014 - Google Patents
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Cross-coupled transistor circuit having diffusion regions of common node on opposing sides of same gate electrode track
ST Becker, J Mali, C Lambert - US Patent 8,836,045, 2014 - Google Patents
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Cross-coupled transistor circuit defined on three gate electrode tracks with diffusion regions of common node on opposing sides of same gate electrode track
ST Becker, J Mali, C Lambert - US Patent 8,735,995, 2014 - Google Patents
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Methods for linewidth modification and apparatus implementing the same
MC Smayling, ST Becker - US Patent 9,159,627, 2015 - Google Patents
A linear-shaped core structure of a first material is formed on an underlying material. A layer
of a second material is con formally deposited over the linear-shaped core structure and …
of a second material is con formally deposited over the linear-shaped core structure and …
Semiconductor chip including region having integrated circuit transistor gate electrodes formed by various conductive structures of specified shape and position and …
ST Becker, MC Smayling - US Patent 9,443,947, 2016 - Google Patents
(65) Prior Publication Data US 2015/0249041 A1 Sep. 3, 2015 Related US Application Data
(63) Continuation of application No. 13/774.919, filed on Feb. 22, 2013, which is a …
(63) Continuation of application No. 13/774.919, filed on Feb. 22, 2013, which is a …
Semiconductor chip including integrated circuit including four transistors of first transistor type and four transistors of second transistor type with electrical connections …
ST Becker, MC Smayling - US Patent 9,425,272, 2016 - Google Patents
(57) ABSTRACT A semiconductor chip region includes a first conductive structure (CS) that
forms a gate electrode (GE) of a first transistor of a first transistor type (TT) and a GE of a first …
forms a gate electrode (GE) of a first transistor of a first transistor type (TT) and a GE of a first …
Enforcement of semiconductor structure regularity for localized transistors and interconnect
S Kornachuk, J Mali, C Lambert, ST Becker - US Patent 9,202,779, 2015 - Google Patents
A global placement grating (GPG) is defined for a chip level to include a set of parallel and
evenly spaced virtual lines. At least one virtual line of the GPG is positioned to intersect each …
evenly spaced virtual lines. At least one virtual line of the GPG is positioned to intersect each …