Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
8-band and 14-band kp modeling of electronic band structure and material gain in Ga (In) AsBi quantum wells grown on GaAs and InP substrates
M Gladysiewicz, R Kudrawiec, MS Wartak - Journal of Applied Physics, 2015 - pubs.aip.org
The electronic band structure and material gain have been calculated for GaAsBi/GaAs
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …
quantum wells (QWs) with various bismuth concentrations (Bi≤ 15%) within the 8-band and …
Theoretical study of adsorption of Bi on cation-rich InAs/(0 0 1) and InP (0 0 1))-ζ (4× 2) reconstructed surfaces
In this work, we perform a theoretical study of the ζ (4× 2) reconstructed surfaces of Bi/InAs (0
0 1) and Bi/InP (0 0 1). We have used the density-functional theory (DFT) within the local …
0 1) and Bi/InP (0 0 1). We have used the density-functional theory (DFT) within the local …
[HTML][HTML] Effect of growth temperature and Sb over in flux ratio on the Bi content and the surface morphology of InSbBi grown by molecular beam epitaxy
We investigated the effect of V Sb/III In flux ratio and growth temperature on the Bi content of
InSbBi material grown on an InSb substrate using molecular beam epitaxy. The Rutherford …
InSbBi material grown on an InSb substrate using molecular beam epitaxy. The Rutherford …
Nearly lattice-matched short-wave infrared InGaAsBi detectors on InP
Y Gu, YG Zhang, XY Chen, YJ Ma, SP Xi, B Du… - Applied Physics …, 2016 - pubs.aip.org
This work reports on the demonstration of a short-wave infrared detector nearly lattice
matched to InP substrate using quaternary InGaAsBi as the absorption layer. The bismuth …
matched to InP substrate using quaternary InGaAsBi as the absorption layer. The bismuth …
Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1− xBix dilute bismide with x≤ 0.034
J Kopaczek, R Kudrawiec, MP Polak… - Applied Physics …, 2014 - pubs.aip.org
Contactless electroreflectance is applied to study the band gap (E 0) and spin-orbit splitting
(Δ SO) in InP 1− x Bi x alloys with 0< x≤ 0.034. The E 0 transition shifts to longer …
(Δ SO) in InP 1− x Bi x alloys with 0< x≤ 0.034. The E 0 transition shifts to longer …
[HTML][HTML] Measurement of InAsBi mole fraction and InBi lattice constant using Rutherford backscattering spectrometry and X-ray diffraction
AJ Shalindar, PT Webster, BJ Wilkens… - Journal of applied …, 2016 - pubs.aip.org
Several 1 μm thick, nearly lattice-matched InAsBi layers grown on GaSb are examined using
Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford …
Rutherford backscattering spectrometry and X-ray diffraction. Random Rutherford …
The roles of Bi in InAs and InAsBi nanostructure growth
Incorporation of bismuth into the III–V semiconductors expands the bandgap towards the
mid-infrared range by bandgap bowing and spin–orbit splitting, providing new opportunities …
mid-infrared range by bandgap bowing and spin–orbit splitting, providing new opportunities …
Photovoltaic functionality assessment of InPBi-based solar cells using a combination of density functional theory and finite element method analysis
This work reports the theoretical investigation of the effect of incorporation of dilute Bismuth
(Bi) on the optical and electronic properties of zinc blende (ZB) phase Indium Phosphide …
(Bi) on the optical and electronic properties of zinc blende (ZB) phase Indium Phosphide …
Photoluminescence from InSb1− xBix alloys at extended wavelengths on InSb
The incorporation of dilute concentrations of bismuth into traditional III–V alloys produces
significant reductions in bandgap energy presenting unique opportunities in strain and …
significant reductions in bandgap energy presenting unique opportunities in strain and …