SiC MOSFET has superior switching performance over Si IGBT in terms of power loss and
temperature characteristics. In order to significantly improve the efficiency and power density …

Silicon carbide (SiC) power devices possess many beneficial properties for power
electronics applications, but commercial 62-mm SiC power module packages with the direct …

This paper presents an improved model to demonstrate the effect of parasitic inductance
and temperature on switching behavior of silicon carbide MOSFET to offer a reference on …

Unlike SiC unipolar devices, the on-state resistance of diamond unipolar devices based on
bulk conduction has a negative temperature coefficient (NTC) which reduces the conduction …

The development of integrated motor drives (IMDs) with high volumetric power density and
reliability are crucial for the continued development and adoption of electric vehicles (EV) …

In this paper, a method of extracting the junction temperature based on the turn-on current
switching rate (dIDS/dt) of silicon carbide (SiC) metal-oxide semiconductor field effect …

This paper proposes an improved new SiC MOSFET gate drive method to reduce
overshoots in current and voltage, EMI (electromagnetic interference), and switching …

In this work a new technique for accelerating the aging of FPGA devices is proposed and
demonstrated. The proposed technique uses harmful configurations (short circuits) to …