Study on trap sensitivity for single material gate and double material gate nano-ribbon FETs
S Rai, R Sharma, R Saha, B Bhowmick… - Physica …, 2024 - iopscience.iop.org
In this work, the trap sensitivity of single material gate (SMG) and dual material gate (DMG)
nano ribbon FETs (NRFETs) are reported using TCAD Sentaurus Device simulator. The trap …
nano ribbon FETs (NRFETs) are reported using TCAD Sentaurus Device simulator. The trap …
Reconfigurable logic-in-memory circuits with ferroelectric nanosheet field-effect transistors
TT Cheng, JC Li, YX Yang, Q Li, HH Hsu… - Physica …, 2024 - iopscience.iop.org
To accommodate the requirements of small device dimensions and the application of
ferroelectric field-effect transistors (FeFETs) in logic-in-memory circuits, we realize the …
ferroelectric field-effect transistors (FeFETs) in logic-in-memory circuits, we realize the …
Quantum Transport through a Constriction in Nanosheet Gate-all-around Transistor
In nanoscale transistors, quantum mechanical effects such as tunneling and quantization
significantly influence device characteristics. However, large-scale quantum transport …
significantly influence device characteristics. However, large-scale quantum transport …