Junctionless gate-all-around nanowire FET with asymmetric spacer for continued scaling
VB Sreenivasulu, V Narendar - Silicon, 2021 - Springer
In this paper, we have performed the scaling of asymmetric junctionless (JL) SOI nanowire
(NW) FET at 10 nm gate length (LG). To study the device electrical performance various DC …
(NW) FET at 10 nm gate length (LG). To study the device electrical performance various DC …
[HTML][HTML] β-Ga2O3 double gate junctionless FET with an efficient volume depletion region
This paper presents a new β-Ga 2 O 3 Junctionless double gate Metal-Oxide-Field-
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Semiconductor-Effect-Transistor (βDG-JL-FET) with an embedded P+ packet at the oxide …
Scattering mechanisms in β-Ga2O3 junctionless SOI MOSFET: investigation of electron mobility and short channel effects
In this work, we investigate the β-Ga 2 O 3 Junctionless SOI MOSFET (β-JLSM) by an
inserted P-layer in the buried oxide (BOX) region (IPB β-JLSM). We focused on the electron …
inserted P-layer in the buried oxide (BOX) region (IPB β-JLSM). We focused on the electron …
Physical analysis of β-Ga2O3 gate-all-around nanowire junctionless transistors: short-channel effects and temperature dependence
In this study, we analyze a β-Ga2O3 gate-all-around nanowire junctionless transistor (β-GAA-
JLT) in accumulation mode. The performances are investigated by considering quantum …
JLT) in accumulation mode. The performances are investigated by considering quantum …
Investigation of tied double gate 4H–SiC junctionless FET in 7 nm channel length with a symmetrical dual p+ layer
In this work, we present a novel ultra-thin 4H–SiC junctionless tied double gate field effect
(DG-JLFET) transistors with a symmetrical dual p+ layer (SDP DG-JLFET) and the proposed …
(DG-JLFET) transistors with a symmetrical dual p+ layer (SDP DG-JLFET) and the proposed …
β-Ga2O3 Junctionless FET with an Ω Shape 4H-SiC Region in Accumulation Mode
D Madadi - Silicon, 2022 - Springer
In this paper, we present a solution for understanding volume depletion and essentially
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
decreasing the leakage current of β-Ga 2 O 3 junctionless FETs (βJL-FETs) by embedding …
Reliability improvement of self-heating effect, hot-carrier injection, and on-current variation by electrical/thermal co-design
In order to achieve reliability improvement in metal–oxidesemiconductor field-effect
transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The …
transistor (MOSFET), the asymmetric MOSFET has been proposed and investigated. The …
Investigation of 4H-SiC gate-all-around cylindrical nanowire junctionless MOSFET including negative capacitance and quantum confinements
In our work, we demonstrate a 4H-SiC gate-all-around cylindrical nanowire junctionless
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
(GAA-NWJL) metal oxide field effect transistor (MOSFET) with a negative capacitance (NC) …
A β-Ga₂O₃ MESFET to Amend the Carrier Distribution by Using a Tunnel Diode
In this article, a new metal-semiconductor field-effect transistor (MESFET) is introduced by
amending the carrier distribution in the active regions of the device for radio frequency …
amending the carrier distribution in the active regions of the device for radio frequency …
An embedded β-Ga2O3 layer in a SOI-LDMOS to improve breakdown voltage
In this work, we present a novel silicon-on-insulator (SOI) laterally diffused metal–oxide–
semiconductor (LDMOS) using β-Ga2O3 material (β-SOI-LDMOS) as a wide-bandgap …
semiconductor (LDMOS) using β-Ga2O3 material (β-SOI-LDMOS) as a wide-bandgap …