Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
GaAsBi: from molecular beam epitaxy growth to devices
RD Richards, NJ Bailey, Y Liu… - … status solidi (b), 2022 - Wiley Online Library
GaAsBi has been researched as a candidate material for optoelectronic devices for around
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
two decades. Bi‐induced localized states induce a rapid rising of the valence band edge …
Growth of high Bi concentration GaAs1− xBix by molecular beam epitaxy
The incorporation of Bi is investigated in the molecular beam epitaxy growth of GaAs 1− x Bi
x. Bi content increases rapidly as the As 2: Ga flux ratio is lowered to 0.5 and then saturates …
x. Bi content increases rapidly as the As 2: Ga flux ratio is lowered to 0.5 and then saturates …
Effect of molecular beam epitaxy growth conditions on the Bi content of GaAs1− xBix
We describe how the Bi content of Ga As 1− x Bi x epilayers grown on GaAs can be
controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth …
controlled by the growth conditions in molecular beam epitaxy. Nonstandard growth …
Kinetically limited growth of GaAsBi by molecular-beam epitaxy
The growth of GaAsBi alloys is plagued by the appearance of Bi droplets due to excess Bi
that accumulates during growth. Here we present an alternate growth regime that kinetically …
that accumulates during growth. Here we present an alternate growth regime that kinetically …
[HTML][HTML] High Bi content GaSbBi alloys
The epitaxial growth, structural, and optical properties of GaSb 1–x Bi x alloys have been
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …
investigated. The Bi incorporation into GaSb is varied in the range 0< x≤ 9.6% by varying …
GaAs1-xBix light emitting diodes
GaAs1-xBix light emitting diodes have been grown and characterized. The p–i–n structure
uses a 100nm intrinsic layer with a central 50nmGaAs1-xBix light emitting layer with 1.8 …
uses a 100nm intrinsic layer with a central 50nmGaAs1-xBix light emitting layer with 1.8 …
Growth and properties of the dilute bismide semiconductor GaAs1− xBix a complementary alloy to the dilute nitrides
In this review we describe the growth and properties of the dilute bismide semiconductor
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …
alloy GaAs1− xBix and show how its properties are in certain respects complementary to the …
Deep-level defects in n-type GaAsBi alloys grown by molecular beam epitaxy at low temperature and their influence on optical properties
Ł Gelczuk, J Kopaczek, TBO Rockett, RD Richards… - Scientific Reports, 2017 - nature.com
Deep-level defects in n-type GaAs1− x Bi x having 0≤ x≤ 0.023 grown on GaAs by
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …
molecular beam epitaxy at substrate temperature of 378° C have been injvestigated by deep …
Surface reconstructions during growth of GaAs1− xBix alloys by molecular beam epitaxy
An in-situ electron diffraction study of surface reconstructions on (001) oriented GaAs1− xBix
films has been carried out during growth by molecular beam epitaxy on GaAs substrates in …
films has been carried out during growth by molecular beam epitaxy on GaAs substrates in …