Vertically-grown TFETs: an extensive analysis
AS Geege, TSA Samuel - Silicon, 2023 - Springer
TFET is an exciting device for ultra-low and low power implementations since it improves
electrical performance while also providing steeper switching ratio. This study encloses with …
electrical performance while also providing steeper switching ratio. This study encloses with …
[PDF][PDF] Design and analysis of hetero dielectric dual material gate underlap spacer tunnel field effect transistor
S Howldar, B Balaji, K Srinivasa Rao - International Journal of Engineering …, 2023 - ije.ir
This paper presents a design and analysis of a Hetero Dielectric Dual Material Gate
Underlap Spacer Tunnel Field Effect Transistor, aiming to enhance device performance and …
Underlap Spacer Tunnel Field Effect Transistor, aiming to enhance device performance and …
Stacked ferroelectric heterojunction tunnel field effect transistor on a buried oxide substrate for enhanced electrical performance
G Gopal, H Garg, H Agrawal… - … Science and Technology, 2022 - iopscience.iop.org
The device behavior of a stacked ferroelectric heterojunction tunnel field effect transistor (Fe-
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …
HTFET) on a buried oxide substrate is investigated in this paper. Si-doped HfO 2 was taken …
Design and simulation of triple metal double-gate germanium on insulator vertical tunnel field effect transistor
In this paper, a novel Triple metal double gate germanium on insulator vertical TFET is
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …
proposed and investigated by using SILVACO ATLAS TCAD tool. Gate metal work-function …
Impact of temperature on the reliability of UTB-DG-FE-TFETs and their RF/analog and linearity parameter dependence
This study aimed to investigate the influence of temperature on the reliability of an ultrathin-
body double-gate ferroelectric tunnel field-effect transistor (UTB-DG-FE-TFET). An in-depth …
body double-gate ferroelectric tunnel field-effect transistor (UTB-DG-FE-TFET). An in-depth …
Implementation of band gap and gate oxide engineering to improve the electrical performance of SiGe/InAs charged plasma-based junctionless-TFET
This paper reports on a charged plasma-based adjustable bandgap source/channel (So/Ch)
interface using a new semiconductor compound (SiGe/InAs) and bimaterial oxide …
interface using a new semiconductor compound (SiGe/InAs) and bimaterial oxide …
Extended Gate to source overlap Heterojunction Vertical TFET: Design, analysis, and optimization with process parameter variations
This report highlights the simulated results of Extended gate to source overlap
Heterojunction Vertical Tunnel field effect transistor (EGH-VTFET) for low-power and high …
Heterojunction Vertical Tunnel field effect transistor (EGH-VTFET) for low-power and high …
Energy band adjustment in a reliable novel charge plasma SiGe source TFET to intensify the BTBT rate
MK Anvarifard, AA Orouji - IEEE Transactions on Electron …, 2021 - ieeexplore.ieee.org
The energy band of a novel Si 0.7 Ge 0.3 source tunneling field-effect transistor (TFET) is
successfully adjusted and sharply bent without any physical formation of metallurgical …
successfully adjusted and sharply bent without any physical formation of metallurgical …
Design of tunnel FET architectures for low power application using improved Chimp optimizer algorithm
An improved Chimps optimizer algorithm is proposed in this paper and is applied for the
performance optimization of tunnel FET architectures for use in low power VLSI circuits. The …
performance optimization of tunnel FET architectures for use in low power VLSI circuits. The …
Electrical performance improvement of charge plasma-based junctionless TFET using novel coalescence of SiGe/GaAs and heterogeneous gate dielectric
In this research article, a junctionless tunnel field-effect transistor (JLTFET) based on the
charge plasma concept has been proposed and analyzed using novel coalescence of …
charge plasma concept has been proposed and analyzed using novel coalescence of …