Recently, ferroelectric tunnel junctions (FTJs) have attracted considerable attention for
potential applications in next‐generation memories, owing to attractive advantages such as …

The evolutionary success in advanced electronics and electrical systems has been
sustained by the rapid development of energy storage technologies. Among various energy …

Abstract Topological domains in ferroelectrics,,,–have received much attention recently
owing to their novel functionalities and potential applications, in electronic devices. So far …

Advances in complex oxide heteroepitaxy have highlighted the enormous potential of
utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film …

In this review paper, recent progress in the fabrication, transfer, and fundamental physical
properties of freestanding oxide perovskite thin films is discussed. First, the main strategies …

Freestanding perovskite oxide membranes have drawn great attention recently since they
offer exceptional structural tunability and stacking ability, providing new opportunities in …

Flexoelectricity induced by the strain gradient is attracting much attention due to its potential
applications in electronic devices. Here, by combining a tunable flexoelectric effect and the …

Flexible electronic devices have been extensively studied for their advantages of
distinguished portability, conformal contact characteristics, and human‐friendly interfaces …

Strain engineering in perovskite oxides provides for dramatic control over material structure,
phase, and properties, but is restricted by the discrete strain states produced by available …

Identifying a suitable water-soluble sacrificial layer is crucial to fabricating large-scale
freestanding oxide membranes, which offer attractive functionalities and integrations with …