Raman scattering is shown to be an effective probe of optical and surface optical phonons in
highly crystalline semiconducting nanowires (SNWs). We show that the confinement model …

We measure the effects of phonon confinement on the Raman spectra of silicon nanowires.
We show how previous spectra were inconsistent with phonon confinement, but were due to …

Silicon nanowires were selectively grown at temperatures below 400° C by plasma
enhanced chemical vapor deposition using silane as the Si source and gold as the catalyst …

We have studied the impact of excitation laser power density on the Raman spectrum of
small-diameter (5− 15 nm) silicon nanowires. At low power densities, a Lorentzian line is …

We demonstrate n-and p-type field-effect transistors based on Si nanowires (SiNWs)
implanted with P and B at fluences as high as 1015 cm− 2. Contrary to what would happen …

Advanced functionalities of silicon nanowires are size-dependent and downscaling of the
nanostructure often leads to higher device performances. Single-crystal silicon nanowires …

A two-step route is presented to dope Ga into ZnO nanowires and also fabricate
heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires …

We measure the effects of phonon confinement on the Raman spectra of silicon nanowires
(SiNWs). We show how previous reports of phonon confinement in SiNWs and …

We review our recent results on the growth and characterization of silicon nanowires
(SiNWs). Vapour-phase deposition techniques are considered, including chemical vapour …

A two-step route is presented to dope Ga into ZnO nanowires and also fabricate
heterostructures of Ga-doped ZnO nanowires on ZnO. The content of Ga in ZnO nanowires …