A cryogenic electro-optic interconnect for superconducting devices
A major challenge to the scalability of cryogenic computing platforms is the heat load
associated with the growing number of electrical cable connections between the …
associated with the growing number of electrical cable connections between the …
[图书][B] Single Flux Quantum Integrated Circuit Design
G Krylov, EG Friedman - 2024 - Springer
Conventional semiconductor-based digital electronics, with complementary metal oxide
semiconductor (CMOS) technology as the primary example, has experienced meteoric …
semiconductor (CMOS) technology as the primary example, has experienced meteoric …
Propagating quantum microwaves: towards applications in communication and sensing
The field of propagating quantum microwaves is a relatively new area of research that is
receiving increased attention due to its promising technological applications, both in …
receiving increased attention due to its promising technological applications, both in …
Performance of a kinetic inductance traveling-wave parametric amplifier at 4 kelvin: Toward an alternative to semiconductor amplifiers
Most microwave readout architectures in quantum computing or sensing rely on a
semiconductor amplifier at 4 K, typically a high-electron mobility transistor (HEMT). Despite …
semiconductor amplifier at 4 K, typically a high-electron mobility transistor (HEMT). Despite …
Electrical characterization and modeling of GaN HEMTs at cryogenic temperatures
In this work, we present a phenomenological cryogenic model for gallium nitride (GaN) high
electron mobility transistors (HEMTs) with validity all the way down to a temperature of 10 K …
electron mobility transistors (HEMTs) with validity all the way down to a temperature of 10 K …
Optimization of channel structures in InP HEMT technology for cryogenic low-noise and low-power operation
We report the impact from channel composition on the cryogenic low-noise performance at
low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor …
low dc power for a 100-nm gate-length InGaAs-InAlAs-InP high-electron mobility transistor …
Cryogenic low-noise amplifiers: Noise performance and power dissipation
JC Bardin - IEEE Solid-State Circuits Magazine, 2021 - ieeexplore.ieee.org
Cryogenically cooled low-noise amplifiers (LNAs) have had a profound impact on
experimental science. For instance, these amplifiers allow us to communicate with distant …
experimental science. For instance, these amplifiers allow us to communicate with distant …
Energy use in quantum data centers: Scaling the impact of computer architecture, qubit performance, size, and thermal parameters
As quantum computers increase in size, the total energy used by a quantum data center,
including the cooling, will become a greater concern. The cooling requirements of quantum …
including the cooling, will become a greater concern. The cooling requirements of quantum …
Improved Thermal Performance of InGaAs/GaAs Nanomembrane HEMTs Transferred onto Various Substrates by Epitaxial Lift-Off
F Gucmann, B Meng, A Chvála, R Kúdela… - ACS Applied …, 2024 - ACS Publications
High-frequency wireless communication in consumer, defense, and space applications
heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka …
heavily relies on the use of compound semiconductor amplifiers. Typically, the X to Ka …
Sub-mW cryogenic InP HEMT LNA for qubit readout
The cryogenic indium phosphide (InP) high-electron-mobility transistor (HEMT) low-noise
amplifier (LNA) is used for the readout amplification of qubits at 4 K where cooling …
amplifier (LNA) is used for the readout amplification of qubits at 4 K where cooling …