Input power and effective area in terahertz detector measurement: A review
The field of terahertz (THz) science and technology research area have been exponentially
growing recently, motivated by the increasing demand for safer security imaging, better …
growing recently, motivated by the increasing demand for safer security imaging, better …
High-performance plasmonic THz detector based on asymmetric FET with vertically integrated antenna in CMOS technology
We report a high-performance plasmonic terahertz (THz) detector based on an antenna-
coupled asymmetric FET by using the 65-nm CMOS technology. By designing an …
coupled asymmetric FET by using the 65-nm CMOS technology. By designing an …
Investigating performance enhancement of CMOS terahertz detectors with different topological structures at 2.58 THz
X Zhang, H Fu, K Ma, N Yan, Y Liu… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
In this study, we designed a terahertz (THz) detector chip based on field-effect transistors
utilizing a standard 55-nm complementary metal–oxide–semiconductor process. The chip …
utilizing a standard 55-nm complementary metal–oxide–semiconductor process. The chip …
Performance enhancement of plasmonic sub-terahertz detector based on antenna integrated low-impedance silicon MOSFET
We demonstrate the performance enhancement of field-effect transistor (FET)-based
plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance …
plasmonic terahertz (THz) detector with monolithic integrated antenna in low-impedance …
Application of a compact sub-terahertz gyrotron for nondestructive inspections
ST Han - IEEE Transactions on Plasma Science, 2020 - ieeexplore.ieee.org
Having the capability of generating superior output power with good spatial pattern at sub-
terahertz (THz) region compared to other sources, gyrotron is well suited for nondestructive …
terahertz (THz) region compared to other sources, gyrotron is well suited for nondestructive …
Improved performance of CMOS terahertz detectors by reducing MOSFET parasitic capacitance
Q Yang, X Ji, Y Xu, F Yan - IEEE Access, 2018 - ieeexplore.ieee.org
The parasitic circuit elements significantly affect rectification performance of metal-oxide-
semiconductor field-effect transistor devices. In this paper, we develop a gate-source …
semiconductor field-effect transistor devices. In this paper, we develop a gate-source …
Signal-conditioning block of a 1× 200 CMOS detector array for a terahertz real-time imaging system
A signal conditioning block of a 1× 200 Complementary Metal-Oxide-Semiconductor
(CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system …
(CMOS) detector array is proposed to be employed with a real-time 0.2 THz imaging system …
Differential CMOS sub-terahertz detector with subthreshold amplifier
We propose a differential-type complementary metal-oxide-semiconductor (CMOS) sub-
terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves …
terahertz (THz) detector with a subthreshold preamplifier. The proposed detector improves …
Performance enhancement of silicon-based sub-terahertz detector by highly localized plasmonic wave in nano-ring FET
A compact monolithic trantenna (tran sistor-an tenna) device is presented for a high-
performance sub-THz wave detector using 28-nm CMOS foundry process. Based on a …
performance sub-THz wave detector using 28-nm CMOS foundry process. Based on a …
Continuous wave terahertz sensing using GaN HEMTs
A commercial GaN high electron mobility transistor (HEMT) is investigated as efficient
detector of terahertz radiations. Enhancement of the photoresponse in excess of one order …
detector of terahertz radiations. Enhancement of the photoresponse in excess of one order …