[HTML][HTML] Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6
T Yoshie, K Ishikawa, SN Hsiao, T Tsutsumi… - Applied Surface …, 2023 - Elsevier
In semiconductor device fabrication, the feature profiles of a high-aspect-ratio (HAR) Si
trench is needed to be controlled considering aspect-ratio-dependent etching (ARDE). This …
trench is needed to be controlled considering aspect-ratio-dependent etching (ARDE). This …
Cool Interconnect: A 1024-bit Wide Bus for Chip-to-Chip Communications in 3-D Integrated Circuits
S Melamed, F Imura, H Nakagawa… - IEEE Transactions …, 2018 - ieeexplore.ieee.org
In this paper, we present “Cool Interconnect,” a 1024-bit wide bus that we have developed to
provide a standardized method of interconnecting chips in 3-D integrated circuits (3DICs) …
provide a standardized method of interconnecting chips in 3-D integrated circuits (3DICs) …
FPGA Emulation of Through-Silicon-Via (TSV) Dataflow Network for 3D Standard Chip Stacking System
T Ohkawa, M Aoyagi - 2023 IEEE Symposium in Low-Power …, 2023 - ieeexplore.ieee.org
Through-Silicon-Via (TSV) is expected to realize high-performance, low-power consumption,
and lowcost 3D-LSI (Large Scale Integration) system. It is realized by integrating pre …
and lowcost 3D-LSI (Large Scale Integration) system. It is realized by integrating pre …
Development of Dissolution Inhibitor in Chemically Amplified Positive Tone Thick Film Resist
Y Sotokawa, T Nishiyama, E Sato… - Journal of Photopolymer …, 2018 - jstage.jst.go.jp
Thick film resist is applied to a template for microelectrode used in semiconductor device
integration. Utilization of positive type resist in chemically amplified system for thick film is …
integration. Utilization of positive type resist in chemically amplified system for thick film is …