The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …

Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …

Metal-oxide thin-film transistors (TFT) fabricated by spray pyrolysis are of increasing interest
because of its simple process and scalability. A bottleneck issue is to get a bubble-free and …

A 2 in. active‐matrix light‐emitting diode (AMLED) display by integration of the micro‐LED
onto the oxide thin‐film transistor (TFT) backplane using flip chip bonding is reported. A blue …

Advancements in thin-film transistor (TFT) technology have extended to electronics that can
withstand extreme bending or even folding. Although the use of ultrathin plastic substrates …

Advancement in thin‐film transistor (TFT) technologies has extended to applications that can
withstand extreme bending or folding. The changes of the performances of amorphous …

The development of low-cost, high-mobility oxide thin-film transistors (TFTs) with excellent
stability is of increasing interest. The coplanar oxide TFTs can be used for high-speed, large …

Heavily doped n-type a-IGZO by F plasma treatment and its thermal stability up to 600 C |
Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text Umbrella Alt …

This letter demonstrates a high-mobility amorphous indium-gallium-zinc oxide (a-IGZO) thin-
film transistor (TFT) with aluminum oxide (Al 2 O 3) passivation layer by radio frequency (RF) …

In this work, we examined the mechanical durability of island-type a-IGZO thin-film
transistors (TFTs). Island TFTs were fabricated on polyimide (PI) islands and were …