Diluted magnetic semiconductors
JK Furdyna - Journal of Applied Physics, 1988 - pubs.aip.org
We review the physical properties of diluted magnetic semiconductors (DMS) of the type
AII1− x Mn x BVI (eg, Cd1− x Mn x Se, Hg1− x Mn x Te). Crystallographic properties are …
AII1− x Mn x BVI (eg, Cd1− x Mn x Se, Hg1− x Mn x Te). Crystallographic properties are …
[图书][B] Handbook of thin film deposition techniques principles, methods, equipment and applications, second editon
K Seshan - 2002 - taylorfrancis.com
The Handbook of Thin Film Deposition Techniques: Principles, Methods, Equipment and
Applications, Second Edition explores the technology behind the spectacular growth in the …
Applications, Second Edition explores the technology behind the spectacular growth in the …
A bird's-eye view on the evolution of semiconductor superlattices and quantum wells
L Esaki - IEEE Journal of Quantum Electronics, 1986 - ieeexplore.ieee.org
Following the past seventeen-year developmental path in the research of semiconductor
superlattices and quantum wells, significant milestones are presented with emphasis on …
superlattices and quantum wells, significant milestones are presented with emphasis on …
Optical properties of (Zn, Mn) and (Cd, Mn) chalcogenide. Mixed crystals and superlattices
O Goede, W Heimbrodt - Phys. Status Solidi B;(German Democratic …, 1988 - osti.gov
The optical properties of the six broad-gap ternary mixed crystals (Zn, Mn) and (Cd, Mn)
sulfide, selenide and telluride are reviewed. The conventional optical properties which are …
sulfide, selenide and telluride are reviewed. The conventional optical properties which are …
[PDF][PDF] Growth of cubic (zinc blende) CdSe by molecular beam epitaxy
We report the growth of cubic (zinc hlende) CdSe epilayers on r 1001 GaAs substrates by
molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 A, and the …
molecular beam epitaxy. The lattice constant of the CdSe epilayers is 6.077 A, and the …
Fundamental properties of III-V semiconductor two-dimensional quantized structures: The basis for optical and electronic device applications
C Weisbuch - Semiconductors and Semimetals, 1987 - Elsevier
Publisher Summary This chapter discusses the fundamental properties of III–V
semiconductor two-dimensional quantized structures, which is the basis for optical and …
semiconductor two-dimensional quantized structures, which is the basis for optical and …
Optical investigation of highly strained InGaAs‐GaAs multiple quantum wells
G Ji, D Huang, UK Reddy, TS Henderson… - Journal of applied …, 1987 - pubs.aip.org
Low‐temperature optical transmission spectra of several In x Ga1− x As/GaAs strained
multiple quantum wells (MQWs) with different well widths and In mole fractions have been …
multiple quantum wells (MQWs) with different well widths and In mole fractions have been …
Optical characterization of pseudomorphic InxGa1−xAs–GaAs single‐quantum‐well heterostructures
NG Anderson, WD Laidig, RM Kolbas… - Journal of applied …, 1986 - pubs.aip.org
Strain and quantum‐size effects in pseudomorphic In x Ga1− x As–GaAs single‐quantum‐
well heterostructures (SQWHs) are examined using low‐temperature photoluminescence …
well heterostructures (SQWHs) are examined using low‐temperature photoluminescence …
Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers
RL Gunshor, LA Kolodziejski, MR Melloch… - Applied physics …, 1987 - pubs.aip.org
The heteroepitaxial growth of ZnSe on GaAs epilayers grown by molecular beam epitaxy is
found to occur via a two‐dimensional growth mechanism. Alternatively, nucleation on a …
found to occur via a two‐dimensional growth mechanism. Alternatively, nucleation on a …